Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (1 0 0)

A. Posadas, M. Berg, H. Seo, David Smith, A. P. Kirk, D. Zhernokletov, R. M. Wallace, A. De Lozanne, A. A. Demkov

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

We have grown epitaxial ferromagnetic LaCoO3 on (1 0 0)-oriented silicon. The films are grown by molecular beam epitaxy using a relaxed epitaxial SrTiO3 buffer layer. X-ray diffraction measurements show a tetragonal LaCoO3 film that is strained to the SrTiO3 buffer layer. XPS measurements are consistent with reported spectra for single crystal, powder, and thin film LaCoO3. Density functional calculations of strained LaCoO3 confirms that the formation of the ferromagnetic state is accompanied by a partial opening of the Co-O-Co bond angle along the c-axis and a reduction in the local symmetry of the CoO 6 octahedra from tetragonal to orthorhombic.

Original languageEnglish (US)
Pages (from-to)1444-1447
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number7
DOIs
StatePublished - Jul 1 2011

Keywords

  • Cobaltates
  • Density functional
  • Ferromagnetism
  • Molecular beam epitaxy
  • Silicon
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Posadas, A., Berg, M., Seo, H., Smith, D., Kirk, A. P., Zhernokletov, D., Wallace, R. M., De Lozanne, A., & Demkov, A. A. (2011). Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (1 0 0). Microelectronic Engineering, 88(7), 1444-1447. https://doi.org/10.1016/j.mee.2011.03.108