Strain-induced ferromagnetism in LaCoO3

Theory and growth on Si (1 0 0)

A. Posadas, M. Berg, H. Seo, David Smith, A. P. Kirk, D. Zhernokletov, R. M. Wallace, A. De Lozanne, A. A. Demkov

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We have grown epitaxial ferromagnetic LaCoO3 on (1 0 0)-oriented silicon. The films are grown by molecular beam epitaxy using a relaxed epitaxial SrTiO3 buffer layer. X-ray diffraction measurements show a tetragonal LaCoO3 film that is strained to the SrTiO3 buffer layer. XPS measurements are consistent with reported spectra for single crystal, powder, and thin film LaCoO3. Density functional calculations of strained LaCoO3 confirms that the formation of the ferromagnetic state is accompanied by a partial opening of the Co-O-Co bond angle along the c-axis and a reduction in the local symmetry of the CoO 6 octahedra from tetragonal to orthorhombic.

Original languageEnglish (US)
Pages (from-to)1444-1447
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number7
DOIs
StatePublished - Jul 2011

Fingerprint

Ferromagnetism
Buffer layers
ferromagnetism
Silicon
Molecular beam epitaxy
Powders
Density functional theory
X ray photoelectron spectroscopy
buffers
Single crystals
X ray diffraction
Thin films
molecular beam epitaxy
strontium titanium oxide
single crystals
symmetry
silicon
thin films
diffraction
x rays

Keywords

  • Cobaltates
  • Density functional
  • Ferromagnetism
  • Molecular beam epitaxy
  • Silicon
  • Strain

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Posadas, A., Berg, M., Seo, H., Smith, D., Kirk, A. P., Zhernokletov, D., ... Demkov, A. A. (2011). Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (1 0 0). Microelectronic Engineering, 88(7), 1444-1447. https://doi.org/10.1016/j.mee.2011.03.108

Strain-induced ferromagnetism in LaCoO3 : Theory and growth on Si (1 0 0). / Posadas, A.; Berg, M.; Seo, H.; Smith, David; Kirk, A. P.; Zhernokletov, D.; Wallace, R. M.; De Lozanne, A.; Demkov, A. A.

In: Microelectronic Engineering, Vol. 88, No. 7, 07.2011, p. 1444-1447.

Research output: Contribution to journalArticle

Posadas, A, Berg, M, Seo, H, Smith, D, Kirk, AP, Zhernokletov, D, Wallace, RM, De Lozanne, A & Demkov, AA 2011, 'Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (1 0 0)', Microelectronic Engineering, vol. 88, no. 7, pp. 1444-1447. https://doi.org/10.1016/j.mee.2011.03.108
Posadas, A. ; Berg, M. ; Seo, H. ; Smith, David ; Kirk, A. P. ; Zhernokletov, D. ; Wallace, R. M. ; De Lozanne, A. ; Demkov, A. A. / Strain-induced ferromagnetism in LaCoO3 : Theory and growth on Si (1 0 0). In: Microelectronic Engineering. 2011 ; Vol. 88, No. 7. pp. 1444-1447.
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