Strain-free, Lattice-matched InGaN/AlInN/GaN for Green Laser Diode

Fernando Ponce (Inventor)

Research output: Patent

Abstract

New method to grow high quality InGaN active layers for green laser diode applications. Our innovation is to grow 50nm thick film of InAlN on GaN, with equal compositions of In and Al. An InGaN QW will then be grown on the InAlN film. At a composition of 50%, InAlN is lattice matched to InGaN required for green laser diodes. This will reduce the lattice mismatch strain on the InGaN quantum well and will enable the growth of high quality InGaN films. The bandgap and refractive index of InAlN are comparable to those of GaN. Therefore, the InGaN quantum well will have good carrier confinement as well as optical confinement, critcal for laser diodes.
Original languageEnglish (US)
StatePublished - Nov 29 2005

Fingerprint

semiconductor lasers
quantum wells
thick films
refractivity

Cite this

@misc{6d41e18be6174512b4aaff6dd40fb38f,
title = "Strain-free, Lattice-matched InGaN/AlInN/GaN for Green Laser Diode",
abstract = "New method to grow high quality InGaN active layers for green laser diode applications. Our innovation is to grow 50nm thick film of InAlN on GaN, with equal compositions of In and Al. An InGaN QW will then be grown on the InAlN film. At a composition of 50{\%}, InAlN is lattice matched to InGaN required for green laser diodes. This will reduce the lattice mismatch strain on the InGaN quantum well and will enable the growth of high quality InGaN films. The bandgap and refractive index of InAlN are comparable to those of GaN. Therefore, the InGaN quantum well will have good carrier confinement as well as optical confinement, critcal for laser diodes.",
author = "Fernando Ponce",
year = "2005",
month = "11",
day = "29",
language = "English (US)",
type = "Patent",

}

TY - PAT

T1 - Strain-free, Lattice-matched InGaN/AlInN/GaN for Green Laser Diode

AU - Ponce, Fernando

PY - 2005/11/29

Y1 - 2005/11/29

N2 - New method to grow high quality InGaN active layers for green laser diode applications. Our innovation is to grow 50nm thick film of InAlN on GaN, with equal compositions of In and Al. An InGaN QW will then be grown on the InAlN film. At a composition of 50%, InAlN is lattice matched to InGaN required for green laser diodes. This will reduce the lattice mismatch strain on the InGaN quantum well and will enable the growth of high quality InGaN films. The bandgap and refractive index of InAlN are comparable to those of GaN. Therefore, the InGaN quantum well will have good carrier confinement as well as optical confinement, critcal for laser diodes.

AB - New method to grow high quality InGaN active layers for green laser diode applications. Our innovation is to grow 50nm thick film of InAlN on GaN, with equal compositions of In and Al. An InGaN QW will then be grown on the InAlN film. At a composition of 50%, InAlN is lattice matched to InGaN required for green laser diodes. This will reduce the lattice mismatch strain on the InGaN quantum well and will enable the growth of high quality InGaN films. The bandgap and refractive index of InAlN are comparable to those of GaN. Therefore, the InGaN quantum well will have good carrier confinement as well as optical confinement, critcal for laser diodes.

M3 - Patent

ER -