Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions

G. Sun, H. H. Cheng, Jose Menendez, J. B. Khurgin, R. A. Soref

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.

Original languageEnglish (US)
Article number251105
JournalApplied Physics Letters
Volume90
Issue number25
DOIs
StatePublished - 2007

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quantum cascade lasers
valleys
threshold currents
conduction bands
phonons
buffers
life (durability)
room temperature
scattering
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions. / Sun, G.; Cheng, H. H.; Menendez, Jose; Khurgin, J. B.; Soref, R. A.

In: Applied Physics Letters, Vol. 90, No. 25, 251105, 2007.

Research output: Contribution to journalArticle

Sun, G. ; Cheng, H. H. ; Menendez, Jose ; Khurgin, J. B. ; Soref, R. A. / Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions. In: Applied Physics Letters. 2007 ; Vol. 90, No. 25.
@article{bdef9c4d89b44474898b97004679de84,
title = "Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions",
abstract = "The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a {"}clean{"} offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.",
author = "G. Sun and Cheng, {H. H.} and Jose Menendez and Khurgin, {J. B.} and Soref, {R. A.}",
year = "2007",
doi = "10.1063/1.2749844",
language = "English (US)",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions

AU - Sun, G.

AU - Cheng, H. H.

AU - Menendez, Jose

AU - Khurgin, J. B.

AU - Soref, R. A.

PY - 2007

Y1 - 2007

N2 - The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.

AB - The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.

UR - http://www.scopus.com/inward/record.url?scp=34547270635&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547270635&partnerID=8YFLogxK

U2 - 10.1063/1.2749844

DO - 10.1063/1.2749844

M3 - Article

AN - SCOPUS:34547270635

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 251105

ER -