Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions

G. Sun, H. H. Cheng, Jose Menendez, J. B. Khurgin, R. A. Soref

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Abstract

The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.

Original languageEnglish (US)
Article number251105
JournalApplied Physics Letters
Volume90
Issue number25
DOIs
StatePublished - Aug 2 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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