Abstract
The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.
| Original language | English (US) |
|---|---|
| Article number | 251105 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 25 |
| DOIs | |
| State | Published - 2007 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions. / Sun, G.; Cheng, H. H.; Menendez, Jose; Khurgin, J. B.; Soref, R. A.
In: Applied Physics Letters, Vol. 90, No. 25, 251105, 2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions
AU - Sun, G.
AU - Cheng, H. H.
AU - Menendez, Jose
AU - Khurgin, J. B.
AU - Soref, R. A.
PY - 2007
Y1 - 2007
N2 - The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.
AB - The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.
UR - http://www.scopus.com/inward/record.url?scp=34547270635&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547270635&partnerID=8YFLogxK
U2 - 10.1063/1.2749844
DO - 10.1063/1.2749844
M3 - Article
AN - SCOPUS:34547270635
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 251105
ER -