Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions

G. Sun; H. H. Cheng; Jose Menendez; J. B. Khurgin; R. A. Soref

doi:10.1063/1.2749844

Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions

G. Sun, H. H. Cheng, Jose Menendez, J. B. Khurgin, R. A. Soref

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

The authors propose a Ge/Ge _0.76Si _0.19Sn _0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge _0.76Si _0.19Sn _0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.

Original language	English (US)
Article number	251105
Journal	Applied Physics Letters
Volume	90
Issue number	25
DOIs	https://doi.org/10.1063/1.2749844
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2749844

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title = "Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions",

abstract = "The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a {"}clean{"} offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.",

author = "G. Sun and Cheng, {H. H.} and Jose Menendez and Khurgin, {J. B.} and Soref, {R. A.}",

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AU - Sun, G.

AU - Cheng, H. H.

AU - Menendez, Jose

AU - Khurgin, J. B.

AU - Soref, R. A.

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AB - The authors propose a Ge/Ge 0.76Si 0.19Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys (Γ, X). The entire structure is strain-free because the lattice-matched Ge and Ge 0.76Si 0.19Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.

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