Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Lin Shao, Yuan Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, Terry Alford, J. W. Mayer, Peng Chen, S. S. Lau

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Abstract

We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed.

Original languageEnglish (US)
Article number251907
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number25
DOIs
StatePublished - Dec 27 2005

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Shao, L., Lin, Y., Swadener, J. G., Lee, J. K., Jia, Q. X., Wang, Y. Q., Nastasi, M., Thompson, P. E., Theodore, N. D., Alford, T., Mayer, J. W., Chen, P., & Lau, S. S. (2005). Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Applied Physics Letters, 87(25), 1-3. [251907]. https://doi.org/10.1063/1.2146211