Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications

Muhammad Usman, Dragica Vasileska, Gerhard Klimeck

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an InxGa1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages527-528
Number of pages2
DOIs
StatePublished - Dec 1 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period7/27/088/1/08

Keywords

  • Electronic structure
  • Quantum dots
  • Strain
  • Strain-reducing layer
  • Wavelength

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Usman, M., Vasileska, D., & Klimeck, G. (2009). Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 527-528). (AIP Conference Proceedings; Vol. 1199). https://doi.org/10.1063/1.3295541