@inproceedings{3a2604a626824a8797b8b9a6e29482f9,
title = "Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications",
abstract = "InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an InxGa1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.",
keywords = "Electronic structure, Quantum dots, Strain, Strain-reducing layer, Wavelength",
author = "Muhammad Usman and Dragica Vasileska and Gerhard Klimeck",
note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 27-07-2008 Through 01-08-2008",
year = "2009",
doi = "10.1063/1.3295541",
language = "English (US)",
isbn = "9780735407367",
series = "AIP Conference Proceedings",
pages = "527--528",
booktitle = "Physics of Semiconductors - 29th International Conference, ICPS 29",
}