Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications

Muhammad Usman; Dragica Vasileska; Gerhard Klimeck

doi:10.1063/1.3295541

Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications

Muhammad Usman, Dragica Vasileska, Gerhard Klimeck

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an In_xGa_1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.

Original language	English (US)
Title of host publication	Physics of Semiconductors - 29th International Conference, ICPS 29
Pages	527-528
Number of pages	2
DOIs	https://doi.org/10.1063/1.3295541
State	Published - 2009
Event	29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil Duration: Jul 27 2008 → Aug 1 2008

Publication series

Name	AIP Conference Proceedings
Volume	1199
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	29th International Conference on Physics of Semiconductors, ICPS 29
Country/Territory	Brazil
City	Rio de Janeiro
Period	7/27/08 → 8/1/08

Keywords

Electronic structure
Quantum dots
Strain
Strain-reducing layer
Wavelength

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3295541

Cite this

Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications. / Usman, Muhammad; Vasileska, Dragica; Klimeck, Gerhard.

Physics of Semiconductors - 29th International Conference, ICPS 29. 2009. p. 527-528 (AIP Conference Proceedings; Vol. 1199).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Usman, M, Vasileska, D & Klimeck, G 2009, Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications. in Physics of Semiconductors - 29th International Conference, ICPS 29. AIP Conference Proceedings, vol. 1199, pp. 527-528, 29th International Conference on Physics of Semiconductors, ICPS 29, Rio de Janeiro, Brazil, 7/27/08. https://doi.org/10.1063/1.3295541

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abstract = "InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an InxGa1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.",

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N2 - InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an InxGa1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.

AB - InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an InxGa1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.

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KW - Quantum dots

KW - Strain

KW - Strain-reducing layer

KW - Wavelength

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Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications

Abstract

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Keywords

ASJC Scopus subject areas

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