Abstract
InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an InxGa1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.
| Original language | English (US) |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Pages | 527-528 |
| Number of pages | 2 |
| Volume | 1199 |
| DOIs | |
| State | Published - 2009 |
| Event | 29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil Duration: Jul 27 2008 → Aug 1 2008 |
Other
| Other | 29th International Conference on Physics of Semiconductors, ICPS 29 |
|---|---|
| Country | Brazil |
| City | Rio de Janeiro |
| Period | 7/27/08 → 8/1/08 |
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Keywords
- Electronic structure
- Quantum dots
- Strain
- Strain-reducing layer
- Wavelength
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications. / Usman, Muhammad; Vasileska, Dragica; Klimeck, Gerhard.
AIP Conference Proceedings. Vol. 1199 2009. p. 527-528.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications
AU - Usman, Muhammad
AU - Vasileska, Dragica
AU - Klimeck, Gerhard
PY - 2009
Y1 - 2009
N2 - InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an InxGa1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.
AB - InAs/GaAs quantum dot systems can emit light at the wavelengths above 1.3 μm by covering the InAs quantum dots with an InxGa1-xAs strain reducing capping layer (SRCL). The presence of the SRCL relaxes the strain in the growth direction while the in-plane compressive strain remains nearly unchanged. This results in an aspect ratio increase of the quantum dot. Both the strain relaxation in the growth direction and the aspect ratio change induce a non-linear red shift. This work studies the dependence of the emission wavelength on the thickness and the indium composition of the SRCL. Experimental topologies have been simulated and a close quantitative match is found.
KW - Electronic structure
KW - Quantum dots
KW - Strain
KW - Strain-reducing layer
KW - Wavelength
UR - http://www.scopus.com/inward/record.url?scp=74849134458&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=74849134458&partnerID=8YFLogxK
U2 - 10.1063/1.3295541
DO - 10.1063/1.3295541
M3 - Conference contribution
AN - SCOPUS:74849134458
SN - 9780735407367
VL - 1199
SP - 527
EP - 528
BT - AIP Conference Proceedings
ER -