Strain determination in heteroepitaxial GaN

Brian Skromme, H. Zhao, D. Wang, H. S. Kong, M. T. Leonard, G. E. Bulman, R. J. Molnar

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Abstract

Residual strains have been evaluated in a variety of GaN layers grown on sapphire or 6H-SiC from wafer curvature at 293 K, which avoids needing to know the unstrained lattice parameters or energy gap of GaN in advance. Estimated strains at 1.7 K are correlated with the energy of the A free exciton to determine its strain dependence. We find that strain-free GaN has an A exciton energy of 3.468±0.002 eV at 1.7 K, and 293 K lattice parameters a = 3.1912 Å and c = 5.1836 Å. These values imply that GaN on SiC is frequently under net biaxial compressive stress due to residual lattice mismatch stress, and that several hundred μm thick GaN layers on sapphire and homoepitaxial layers grown on bulk platelets grown at high pressure are both under about 1 × 10-3 in-plane compressive strain. These conclusions conflict with most previous assumptions.

Original languageEnglish (US)
Pages (from-to)829-831
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number6
DOIs
StatePublished - Aug 11 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Skromme, B., Zhao, H., Wang, D., Kong, H. S., Leonard, M. T., Bulman, G. E., & Molnar, R. J. (1997). Strain determination in heteroepitaxial GaN. Applied Physics Letters, 71(6), 829-831. https://doi.org/10.1063/1.119659