Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE

Z. B. Chen, Shane Johnson, C. Navarro, S. Chaparro, J. Xu, N. Samal, J. Wang, Yu Cao, S. Yu, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Strain compensated semiconductor lasers grown on semiconducting gallium arsenide substrate using molecular beam epitaxy were experimentally demonstrated. Strong electron confinement was obtained due to large bandgap in the semiconducting gallium arsenic phosphide layers. The laser structure consisted of three quantum wells embedded between two 0.15 μm graded-index (GRIN) waveguide layers. Narrow photoluminescence with strong intensity were achieved at room temperatures. The threshold current density was found to be 1.2 kA/cm2 for the lasers under 100 ns pulses at a 20 kHz repetition rate. A smaller blue shift was obtained for the laser diodes indicating improved optial quality of the active layers.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Pages209
Number of pages1
StatePublished - 2001
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States
Duration: May 6 2001May 11 2001

Other

OtherConference on Lasers and Electro-Optics (CLEO)
CountryUnited States
CityBaltimore, MD
Period5/6/015/11/01

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Chen, Z. B., Johnson, S., Navarro, C., Chaparro, S., Xu, J., Samal, N., Wang, J., Cao, Y., Yu, S., & Zhang, Y-H. (2001). Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE. In Conference on Lasers and Electro-Optics Europe - Technical Digest (pp. 209)