Abstract
Strain compensated semiconductor lasers grown on semiconducting gallium arsenide substrate using molecular beam epitaxy were experimentally demonstrated. Strong electron confinement was obtained due to large bandgap in the semiconducting gallium arsenic phosphide layers. The laser structure consisted of three quantum wells embedded between two 0.15 μm graded-index (GRIN) waveguide layers. Narrow photoluminescence with strong intensity were achieved at room temperatures. The threshold current density was found to be 1.2 kA/cm2 for the lasers under 100 ns pulses at a 20 kHz repetition rate. A smaller blue shift was obtained for the laser diodes indicating improved optial quality of the active layers.
Original language | English (US) |
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Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
Pages | 209 |
Number of pages | 1 |
State | Published - 2001 |
Event | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001 |
Other
Other | Conference on Lasers and Electro-Optics (CLEO) |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 5/6/01 → 5/11/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering