Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE

Z. B. Chen, Shane Johnson, C. Navarro, S. Chaparro, J. Xu, N. Samal, J. Wang, Yu Cao, S. Yu, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Strain compensated semiconductor lasers grown on semiconducting gallium arsenide substrate using molecular beam epitaxy were experimentally demonstrated. Strong electron confinement was obtained due to large bandgap in the semiconducting gallium arsenic phosphide layers. The laser structure consisted of three quantum wells embedded between two 0.15 μm graded-index (GRIN) waveguide layers. Narrow photoluminescence with strong intensity were achieved at room temperatures. The threshold current density was found to be 1.2 kA/cm2 for the lasers under 100 ns pulses at a 20 kHz repetition rate. A smaller blue shift was obtained for the laser diodes indicating improved optial quality of the active layers.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Pages209
Number of pages1
StatePublished - 2001
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States
Duration: May 6 2001May 11 2001

Other

OtherConference on Lasers and Electro-Optics (CLEO)
CountryUnited States
CityBaltimore, MD
Period5/6/015/11/01

Fingerprint

Semiconducting gallium
Molecular beam epitaxy
Semiconducting gallium arsenide
Semiconductor lasers
Threshold current density
Lasers
Arsenic
Semiconductor quantum wells
Laser pulses
Photoluminescence
Energy gap
Waveguides
Electrons
Substrates
Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Chen, Z. B., Johnson, S., Navarro, C., Chaparro, S., Xu, J., Samal, N., ... Zhang, Y-H. (2001). Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE. In Conference on Lasers and Electro-Optics Europe - Technical Digest (pp. 209)

Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE. / Chen, Z. B.; Johnson, Shane; Navarro, C.; Chaparro, S.; Xu, J.; Samal, N.; Wang, J.; Cao, Yu; Yu, S.; Zhang, Yong-Hang.

Conference on Lasers and Electro-Optics Europe - Technical Digest. 2001. p. 209.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, ZB, Johnson, S, Navarro, C, Chaparro, S, Xu, J, Samal, N, Wang, J, Cao, Y, Yu, S & Zhang, Y-H 2001, Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE. in Conference on Lasers and Electro-Optics Europe - Technical Digest. pp. 209, Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States, 5/6/01.
Chen ZB, Johnson S, Navarro C, Chaparro S, Xu J, Samal N et al. Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE. In Conference on Lasers and Electro-Optics Europe - Technical Digest. 2001. p. 209
Chen, Z. B. ; Johnson, Shane ; Navarro, C. ; Chaparro, S. ; Xu, J. ; Samal, N. ; Wang, J. ; Cao, Yu ; Yu, S. ; Zhang, Yong-Hang. / Strain compensated GaAsP/GaAsSb/GaAs 1.3 μm lasers grown on GaAs using MBE. Conference on Lasers and Electro-Optics Europe - Technical Digest. 2001. pp. 209
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AU - Johnson, Shane

AU - Navarro, C.

AU - Chaparro, S.

AU - Xu, J.

AU - Samal, N.

AU - Wang, J.

AU - Cao, Yu

AU - Yu, S.

AU - Zhang, Yong-Hang

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AB - Strain compensated semiconductor lasers grown on semiconducting gallium arsenide substrate using molecular beam epitaxy were experimentally demonstrated. Strong electron confinement was obtained due to large bandgap in the semiconducting gallium arsenic phosphide layers. The laser structure consisted of three quantum wells embedded between two 0.15 μm graded-index (GRIN) waveguide layers. Narrow photoluminescence with strong intensity were achieved at room temperatures. The threshold current density was found to be 1.2 kA/cm2 for the lasers under 100 ns pulses at a 20 kHz repetition rate. A smaller blue shift was obtained for the laser diodes indicating improved optial quality of the active layers.

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