Strain-balanced InAs/InAs_1-xSb_x type-II superlattices grown by molecular beam epitaxy on GaSb substrates

Engineering & Materials Science

• Superlattices 100%
• Photoluminescence 86%
• Molecular beam epitaxy 82%
• Substrates 37%
• Wavelength 31%
• Infrared radiation 30%
• Full width at half maximum 26%
• Energy gap 20%
• X ray diffraction 17%

Chemical Compounds

• Molecular Beam Epitaxy 76%
• Superlattice 54%
• Photoluminescence 41%
• Band Gap 13%
• X-Ray Diffraction 8%
• Energy 8%

Physics & Astronomy

• superlattices 50%
• molecular beam epitaxy 45%
• photoluminescence 37%
• wavelengths 16%
• diffraction 9%
• x rays 8%
• energy 5%