Abstract

Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) on GaSb substrates with 0.27 x 0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 m. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples (9.5, 9.9, and 11.1 m) and to within 9 meV for a mid-wavelength infrared sample (5.9 m). X-ray diffraction measurements reveal average SL mismatches of less than 0.2, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.

Original languageEnglish (US)
Article number02B107
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume30
Issue number2
DOIs
StatePublished - Mar 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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