Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates

Elizabeth H. Steenbergen; Kalyan Nunna; Lu Ouyang; Bruno Ullrich; Diana L. Huffaker; David Smith; Yong-Hang Zhang

doi:10.1116/1.3672028

Strain-balanced InAs/InAs_1-xSb_x type-II superlattices grown by molecular beam epitaxy on GaSb substrates

Elizabeth H. Steenbergen, Kalyan Nunna, Lu Ouyang, Bruno Ullrich, Diana L. Huffaker, David Smith, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

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Abstract

Strain-balanced InAs/InAs_1-xSb_x type-II superlattices (SLs) on GaSb substrates with 0.27 x 0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 m. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples (9.5, 9.9, and 11.1 m) and to within 9 meV for a mid-wavelength infrared sample (5.9 m). X-ray diffraction measurements reveal average SL mismatches of less than 0.2, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.

Original language	English (US)
Article number	02B107
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1116/1.3672028
State	Published - Mar 2012

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{4396b3df57e14dd2a601dd6217239dfc,

title = "Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates",

abstract = "Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) on GaSb substrates with 0.27 x 0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 m. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples (9.5, 9.9, and 11.1 m) and to within 9 meV for a mid-wavelength infrared sample (5.9 m). X-ray diffraction measurements reveal average SL mismatches of less than 0.2, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.",

author = "Steenbergen, {Elizabeth H.} and Kalyan Nunna and Lu Ouyang and Bruno Ullrich and Huffaker, {Diana L.} and David Smith and Yong-Hang Zhang",

note = "Funding Information: This paper is based upon work supported in part by the U. S. Army Research Laboratory and the U. S. Army Research Office MURI program under Grant No. W911NF-10-1-0524 and Air Force Office of Scientific Research Grant No. (FA9550-10-1-0129). PL experiments were performed at AFRL/RXPS with the support of G. Brown. E.H.S. appreciates the DOD SMART and SFAz scholarships and acknowledges the ASU Office of the Vice-President for Research and Economic Affairs, the Graduate Research Support Program, and the Graduate College.",

year = "2012",

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doi = "10.1116/1.3672028",

language = "English (US)",

volume = "30",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

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AU - Steenbergen, Elizabeth H.

AU - Nunna, Kalyan

AU - Ouyang, Lu

AU - Ullrich, Bruno

AU - Huffaker, Diana L.

AU - Smith, David

AU - Zhang, Yong-Hang

N1 - Funding Information: This paper is based upon work supported in part by the U. S. Army Research Laboratory and the U. S. Army Research Office MURI program under Grant No. W911NF-10-1-0524 and Air Force Office of Scientific Research Grant No. (FA9550-10-1-0129). PL experiments were performed at AFRL/RXPS with the support of G. Brown. E.H.S. appreciates the DOD SMART and SFAz scholarships and acknowledges the ASU Office of the Vice-President for Research and Economic Affairs, the Graduate Research Support Program, and the Graduate College.

PY - 2012/3

Y1 - 2012/3

N2 - Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) on GaSb substrates with 0.27 x 0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 m. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples (9.5, 9.9, and 11.1 m) and to within 9 meV for a mid-wavelength infrared sample (5.9 m). X-ray diffraction measurements reveal average SL mismatches of less than 0.2, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.

AB - Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) on GaSb substrates with 0.27 x 0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 m. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples (9.5, 9.9, and 11.1 m) and to within 9 meV for a mid-wavelength infrared sample (5.9 m). X-ray diffraction measurements reveal average SL mismatches of less than 0.2, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.

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Strain-balanced InAs/InAs_1-xSb_x type-II superlattices grown by molecular beam epitaxy on GaSb substrates

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