TY - JOUR
T1 - Stoichiometric and non-stoichiometric films in the Si-O-N system
T2 - Mechanical, electrical, and dielectric properties
AU - Torrison, L.
AU - Tolle, J.
AU - Kouvetakis, John
AU - Dey, Sandwip
AU - Gu, D.
AU - Tsong, I. S T
AU - Crozier, Peter
N1 - Funding Information:
JK acknowledges support from the National Science Foundation DMR 9902417 and the US Army Research Office (Grant No. DAAD19-00-1-0471). SKD appreciates the support for high-K dielectric research at ASU from National Science Foundation (Grant No.: ECS 0000121), Michael Walk and Thomas Dory of Intel, and the Intel Semiconductor Technology Council.
PY - 2003/1/15
Y1 - 2003/1/15
N2 - A novel low-temperature (600-850 °C), chemical vapor deposition method, involving a simple reaction between disiloxane (H3Si-O-SiH3) and ammonia (NH3), is described to deposit stoichiometric, Si2N2O, and non-stoichiometric, SiOxNy, silicon oxynitride films (5-500 nm) on Si substrates. Note, the gaseous reactants are free from carbon and other undesirable contaminants. The deposition of Si2N2O on Si (with (1 0 0) orientation and a native oxide layer of 1 nm) was conducted at a pressure of 2 Torr and at extremely high rates of 20-30 nm min-1 with complete hydrogen elimination. The deposition rate of SiOxNy on highly-doped Si (with (1 1 1) orientation but without native oxide) at 10-6 Torr was ∼ 1.5 nm min-1, and achieved via the reaction of disiloxane with N atoms, generated by an RF source in an MBE chamber. The phase, composition and structure of the oxynitride films were characterized by a variety of analytical techniques. The hardness of Si2N2O, and the capacitance-voltage (C-V) as a function of frequency and leakage current density-voltage (JL-V) characteristics were determined on MOS (Al/Si2N2O/SiO/p-Si) structures. The hardness, frequency-dispersionless dielectric permittivity (K), and JL at 6 V for a 20 nm Si2N2O film were determined to be 18 GPa, 6 and 0.05-0.1 nA cm-2, respectively.
AB - A novel low-temperature (600-850 °C), chemical vapor deposition method, involving a simple reaction between disiloxane (H3Si-O-SiH3) and ammonia (NH3), is described to deposit stoichiometric, Si2N2O, and non-stoichiometric, SiOxNy, silicon oxynitride films (5-500 nm) on Si substrates. Note, the gaseous reactants are free from carbon and other undesirable contaminants. The deposition of Si2N2O on Si (with (1 0 0) orientation and a native oxide layer of 1 nm) was conducted at a pressure of 2 Torr and at extremely high rates of 20-30 nm min-1 with complete hydrogen elimination. The deposition rate of SiOxNy on highly-doped Si (with (1 1 1) orientation but without native oxide) at 10-6 Torr was ∼ 1.5 nm min-1, and achieved via the reaction of disiloxane with N atoms, generated by an RF source in an MBE chamber. The phase, composition and structure of the oxynitride films were characterized by a variety of analytical techniques. The hardness of Si2N2O, and the capacitance-voltage (C-V) as a function of frequency and leakage current density-voltage (JL-V) characteristics were determined on MOS (Al/Si2N2O/SiO/p-Si) structures. The hardness, frequency-dispersionless dielectric permittivity (K), and JL at 6 V for a 20 nm Si2N2O film were determined to be 18 GPa, 6 and 0.05-0.1 nA cm-2, respectively.
KW - Chemical vapor deposition
KW - Disiloxane
KW - Silicon oxynitride
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U2 - 10.1016/S0921-5107(02)00402-6
DO - 10.1016/S0921-5107(02)00402-6
M3 - Article
AN - SCOPUS:0037437754
SN - 0921-5107
VL - 97
SP - 54
EP - 58
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1
ER -