Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner, Xiao Hang Li, Tsung Ting Kao, Md Mahbub Satter, Hee Jin Kim, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis, Kewei Sun, Yong Wei, Ti Li, Alec Fischer, Fernando Ponce

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa 1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.

Original languageEnglish (US)
Pages (from-to)1768-1770
Number of pages3
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number9
DOIs
StatePublished - Sep 1 2013

Keywords

  • AlGaInN
  • III-V semiconductors
  • MOCVD
  • lasers
  • metalorganic chemical vapor deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Lochner, Z., Li, X. H., Kao, T. T., Satter, M. M., Kim, H. J., Shen, S. C., Yoder, P. D., Ryou, J. H., Dupuis, R. D., Sun, K., Wei, Y., Li, T., Fischer, A., & Ponce, F. (2013). Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate. Physica Status Solidi (A) Applications and Materials Science, 210(9), 1768-1770. https://doi.org/10.1002/pssa.201329013