Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner, Xiao Hang Li, Tsung Ting Kao, Md Mahbub Satter, Hee Jin Kim, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis, Kewei Sun, Yong Wei, Ti Li, Alec Fischer, Fernando Ponce

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa 1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.

Original languageEnglish (US)
Pages (from-to)1768-1770
Number of pages3
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number9
DOIs
StatePublished - Sep 2013

Fingerprint

Stimulated emission
stimulated emission
Heterojunctions
Substrates
injection
Ultraviolet lasers
Aluminum Oxide
ultraviolet lasers
Sapphire
Semiconductor lasers
lasing
radiant flux density
sapphire
Waveguides
semiconductor lasers
waveguides
thresholds
aluminum gallium nitride
Lasers
room temperature

Keywords

  • AlGaInN
  • III-V semiconductors
  • lasers
  • metalorganic chemical vapor deposition
  • MOCVD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate. / Lochner, Zachary; Li, Xiao Hang; Kao, Tsung Ting; Satter, Md Mahbub; Kim, Hee Jin; Shen, Shyh Chiang; Yoder, P. Douglas; Ryou, Jae Hyun; Dupuis, Russell D.; Sun, Kewei; Wei, Yong; Li, Ti; Fischer, Alec; Ponce, Fernando.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 9, 09.2013, p. 1768-1770.

Research output: Contribution to journalArticle

Lochner, Z, Li, XH, Kao, TT, Satter, MM, Kim, HJ, Shen, SC, Yoder, PD, Ryou, JH, Dupuis, RD, Sun, K, Wei, Y, Li, T, Fischer, A & Ponce, F 2013, 'Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate', Physica Status Solidi (A) Applications and Materials Science, vol. 210, no. 9, pp. 1768-1770. https://doi.org/10.1002/pssa.201329013
Lochner, Zachary ; Li, Xiao Hang ; Kao, Tsung Ting ; Satter, Md Mahbub ; Kim, Hee Jin ; Shen, Shyh Chiang ; Yoder, P. Douglas ; Ryou, Jae Hyun ; Dupuis, Russell D. ; Sun, Kewei ; Wei, Yong ; Li, Ti ; Fischer, Alec ; Ponce, Fernando. / Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate. In: Physica Status Solidi (A) Applications and Materials Science. 2013 ; Vol. 210, No. 9. pp. 1768-1770.
@article{0b22efca746549cf8024d76d7b2c1ebe,
title = "Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate",
abstract = "Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa 1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.",
keywords = "AlGaInN, III-V semiconductors, lasers, metalorganic chemical vapor deposition, MOCVD",
author = "Zachary Lochner and Li, {Xiao Hang} and Kao, {Tsung Ting} and Satter, {Md Mahbub} and Kim, {Hee Jin} and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Ryou, {Jae Hyun} and Dupuis, {Russell D.} and Kewei Sun and Yong Wei and Ti Li and Alec Fischer and Fernando Ponce",
year = "2013",
month = "9",
doi = "10.1002/pssa.201329013",
language = "English (US)",
volume = "210",
pages = "1768--1770",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "9",

}

TY - JOUR

T1 - Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

AU - Lochner, Zachary

AU - Li, Xiao Hang

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Kim, Hee Jin

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Sun, Kewei

AU - Wei, Yong

AU - Li, Ti

AU - Fischer, Alec

AU - Ponce, Fernando

PY - 2013/9

Y1 - 2013/9

N2 - Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa 1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.

AB - Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa 1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.

KW - AlGaInN

KW - III-V semiconductors

KW - lasers

KW - metalorganic chemical vapor deposition

KW - MOCVD

UR - http://www.scopus.com/inward/record.url?scp=84884978449&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884978449&partnerID=8YFLogxK

U2 - 10.1002/pssa.201329013

DO - 10.1002/pssa.201329013

M3 - Article

AN - SCOPUS:84884978449

VL - 210

SP - 1768

EP - 1770

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 9

ER -