Stepped surfaces of sapphire (Al2O3) with low miller indices

Godfrey C. Ndubuisi, Jingyue Liu, J. M. Cowley

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Oxygenannealed surfaces of sapphire with low Miller indices ((0001), {1010}, {1120}, {1011}) have been studied in both transmission electron microscopy (TEM) and reflection electron microscopy (REM) configurations. The significance of REM diffraction conditions for the determination of the nature of the step heights is discussed. The relationship between the TEM and REM images is explained. The structural features are those that might be expected from considerations of the atom arrangement in the low Miller index planes. The structural features on the surfaces varied with respect to annealing temperature and surface condition. Thermally stable structures that might appear from consideration of the equilibriumannealing temperature are proposed. Copyright1992 WileyLiss, Inc.

Original languageEnglish (US)
Pages (from-to)10-22
Number of pages13
JournalMicroscopy Research and Technique
Volume21
Issue number1
DOIs
StatePublished - 1992

Fingerprint

Aluminum Oxide
Electron reflection
Transmission Electron Microscopy
Sapphire
Electron microscopy
electron microscopy
sapphire
Electron Microscopy
Transmission electron microscopy
transmission electron microscopy
Temperature
Diffraction
Annealing
Atoms
annealing
temperature
configurations
diffraction
atoms

Keywords

  • Relationships
  • Surface structural features
  • TEM and REM images

ASJC Scopus subject areas

  • Anatomy
  • Medicine(all)
  • Histology
  • Instrumentation
  • Medical Laboratory Technology

Cite this

Stepped surfaces of sapphire (Al2O3) with low miller indices. / Ndubuisi, Godfrey C.; Liu, Jingyue; Cowley, J. M.

In: Microscopy Research and Technique, Vol. 21, No. 1, 1992, p. 10-22.

Research output: Contribution to journalArticle

Ndubuisi, Godfrey C. ; Liu, Jingyue ; Cowley, J. M. / Stepped surfaces of sapphire (Al2O3) with low miller indices. In: Microscopy Research and Technique. 1992 ; Vol. 21, No. 1. pp. 10-22.
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