Step coverage prediction in plasma-enhanced deposition of silicon dioxide from TEOS

Gregory Raupp, Timothy S. Cale, H. Peter W Hey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Summary form only given. The authors have developed a transient mathematical model incorporating simultaneous Knudsen diffusion and the competing heterogeneous reactions in rectangular trenches to predict quantitatively step coverage in tetraethylorthosilicate (TEOS) PECVD. The model reveals that deposition uniformity, and hence the step coverage, is controlled by two dimensionless groups. The first group represents a ratio of a characteristic deposition rate to a characteristic atomic oxygen diffusion rate. The second group represents the ratio of a characteristic wall recombination, or quench rate to diffusion rate. These groups can be used as a guideline to determine how process conditions should be adjusted to increase deposition rate without degrading step coverage. The model correctly predicts that high step coverages are obtained with low RF power; low pressure, and low wafer temperature.

Original languageEnglish (US)
Title of host publicationSixth Int VLSI Multilevel Interconnect Conf
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages488
Number of pages1
StatePublished - 1989
EventSixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
Duration: Jun 12 1989Jun 13 1989

Other

OtherSixth International VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period6/12/896/13/89

Fingerprint

Silica
Deposition rates
Plasmas
Plasma enhanced chemical vapor deposition
Mathematical models
Oxygen
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Raupp, G., Cale, T. S., & Hey, H. P. W. (1989). Step coverage prediction in plasma-enhanced deposition of silicon dioxide from TEOS. In Anon (Ed.), Sixth Int VLSI Multilevel Interconnect Conf (pp. 488). Piscataway, NJ, United States: Publ by IEEE.

Step coverage prediction in plasma-enhanced deposition of silicon dioxide from TEOS. / Raupp, Gregory; Cale, Timothy S.; Hey, H. Peter W.

Sixth Int VLSI Multilevel Interconnect Conf. ed. / Anon. Piscataway, NJ, United States : Publ by IEEE, 1989. p. 488.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Raupp, G, Cale, TS & Hey, HPW 1989, Step coverage prediction in plasma-enhanced deposition of silicon dioxide from TEOS. in Anon (ed.), Sixth Int VLSI Multilevel Interconnect Conf. Publ by IEEE, Piscataway, NJ, United States, pp. 488, Sixth International VLSI Multilevel Interconnection Conference, Santa Clara, CA, USA, 6/12/89.
Raupp G, Cale TS, Hey HPW. Step coverage prediction in plasma-enhanced deposition of silicon dioxide from TEOS. In Anon, editor, Sixth Int VLSI Multilevel Interconnect Conf. Piscataway, NJ, United States: Publ by IEEE. 1989. p. 488
Raupp, Gregory ; Cale, Timothy S. ; Hey, H. Peter W. / Step coverage prediction in plasma-enhanced deposition of silicon dioxide from TEOS. Sixth Int VLSI Multilevel Interconnect Conf. editor / Anon. Piscataway, NJ, United States : Publ by IEEE, 1989. pp. 488
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AB - Summary form only given. The authors have developed a transient mathematical model incorporating simultaneous Knudsen diffusion and the competing heterogeneous reactions in rectangular trenches to predict quantitatively step coverage in tetraethylorthosilicate (TEOS) PECVD. The model reveals that deposition uniformity, and hence the step coverage, is controlled by two dimensionless groups. The first group represents a ratio of a characteristic deposition rate to a characteristic atomic oxygen diffusion rate. The second group represents the ratio of a characteristic wall recombination, or quench rate to diffusion rate. These groups can be used as a guideline to determine how process conditions should be adjusted to increase deposition rate without degrading step coverage. The model correctly predicts that high step coverages are obtained with low RF power; low pressure, and low wafer temperature.

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