### Abstract

Summary form only given. The authors have developed a transient mathematical model incorporating simultaneous Knudsen diffusion and the competing heterogeneous reactions in rectangular trenches to predict quantitatively step coverage in tetraethylorthosilicate (TEOS) PECVD. The model reveals that deposition uniformity, and hence the step coverage, is controlled by two dimensionless groups. The first group represents a ratio of a characteristic deposition rate to a characteristic atomic oxygen diffusion rate. The second group represents the ratio of a characteristic wall recombination, or quench rate to diffusion rate. These groups can be used as a guideline to determine how process conditions should be adjusted to increase deposition rate without degrading step coverage. The model correctly predicts that high step coverages are obtained with low RF power; low pressure, and low wafer temperature.

Original language | English (US) |
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Title of host publication | Sixth Int VLSI Multilevel Interconnect Conf |

Editors | Anon |

Place of Publication | Piscataway, NJ, United States |

Publisher | Publ by IEEE |

Pages | 488 |

Number of pages | 1 |

State | Published - 1989 |

Event | Sixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA Duration: Jun 12 1989 → Jun 13 1989 |

### Other

Other | Sixth International VLSI Multilevel Interconnection Conference |
---|---|

City | Santa Clara, CA, USA |

Period | 6/12/89 → 6/13/89 |

### Fingerprint

### ASJC Scopus subject areas

- Engineering(all)

### Cite this

*Sixth Int VLSI Multilevel Interconnect Conf*(pp. 488). Piscataway, NJ, United States: Publ by IEEE.

**Step coverage prediction in plasma-enhanced deposition of silicon dioxide from TEOS.** / Raupp, Gregory; Cale, Timothy S.; Hey, H. Peter W.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*Sixth Int VLSI Multilevel Interconnect Conf.*Publ by IEEE, Piscataway, NJ, United States, pp. 488, Sixth International VLSI Multilevel Interconnection Conference, Santa Clara, CA, USA, 6/12/89.

}

TY - GEN

T1 - Step coverage prediction in plasma-enhanced deposition of silicon dioxide from TEOS

AU - Raupp, Gregory

AU - Cale, Timothy S.

AU - Hey, H. Peter W

PY - 1989

Y1 - 1989

N2 - Summary form only given. The authors have developed a transient mathematical model incorporating simultaneous Knudsen diffusion and the competing heterogeneous reactions in rectangular trenches to predict quantitatively step coverage in tetraethylorthosilicate (TEOS) PECVD. The model reveals that deposition uniformity, and hence the step coverage, is controlled by two dimensionless groups. The first group represents a ratio of a characteristic deposition rate to a characteristic atomic oxygen diffusion rate. The second group represents the ratio of a characteristic wall recombination, or quench rate to diffusion rate. These groups can be used as a guideline to determine how process conditions should be adjusted to increase deposition rate without degrading step coverage. The model correctly predicts that high step coverages are obtained with low RF power; low pressure, and low wafer temperature.

AB - Summary form only given. The authors have developed a transient mathematical model incorporating simultaneous Knudsen diffusion and the competing heterogeneous reactions in rectangular trenches to predict quantitatively step coverage in tetraethylorthosilicate (TEOS) PECVD. The model reveals that deposition uniformity, and hence the step coverage, is controlled by two dimensionless groups. The first group represents a ratio of a characteristic deposition rate to a characteristic atomic oxygen diffusion rate. The second group represents the ratio of a characteristic wall recombination, or quench rate to diffusion rate. These groups can be used as a guideline to determine how process conditions should be adjusted to increase deposition rate without degrading step coverage. The model correctly predicts that high step coverages are obtained with low RF power; low pressure, and low wafer temperature.

UR - http://www.scopus.com/inward/record.url?scp=0024880353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024880353&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0024880353

SP - 488

BT - Sixth Int VLSI Multilevel Interconnect Conf

A2 - Anon, null

PB - Publ by IEEE

CY - Piscataway, NJ, United States

ER -