Step coverage of tungsten silicide films deposited bylow pressure dichlorosilane reduction of tungsten hexafluoride

Gregory Raupp; Timothy S. Cale; Manoj K. Jain; Bridget Rogers; Damodaran Srinivas

doi:10.1016/S0040-6090(05)80032-X

Step coverage of tungsten silicide films deposited bylow pressure dichlorosilane reduction of tungsten hexafluoride

Gregory Raupp, Timothy S. Cale, Manoj K. Jain, Bridget Rogers, Damodaran Srinivas

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Dichlorosilane reduction of tungsten hexafluoride was used to deposit tungstensilicide (WSi_x, x = 1-2.4) in rectangular trenches on patterned wafers at various temperatures using a commercial-scale Spectrum chemical vapour deposition cold wall single-wafer reactor. Step coverages of the as-deposited films determined using cross-sectional scanning electron micrographs were in qualitative agreement with predictions of a continuum diffusion-reaction model of deposition within the features. The model correctly predicts the observed trend that step coverage degrades with increasing wafer temperature. Particularly poor step coverages are realized for conditions in which the reactor is feed rate limited, or starved, for tungsten hexafluoride. Moreover, the model also predicts that under certain conditions significant film composition variation may exist along the sidewalls within a given feature. We have confirmed this behavior using careful Auger analysis of the film deposited on the sidewalls.

Original language	English (US)
Pages (from-to)	234-243
Number of pages	10
Journal	Thin Solid Films
Volume	193-194
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0040-6090(05)80032-X
State	Published - 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(05)80032-X

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@article{ae191dd6c85246c7a4315a7dbdbd907c,

title = "Step coverage of tungsten silicide films deposited bylow pressure dichlorosilane reduction of tungsten hexafluoride",

abstract = "Dichlorosilane reduction of tungsten hexafluoride was used to deposit tungstensilicide (WSix, x = 1-2.4) in rectangular trenches on patterned wafers at various temperatures using a commercial-scale Spectrum chemical vapour deposition cold wall single-wafer reactor. Step coverages of the as-deposited films determined using cross-sectional scanning electron micrographs were in qualitative agreement with predictions of a continuum diffusion-reaction model of deposition within the features. The model correctly predicts the observed trend that step coverage degrades with increasing wafer temperature. Particularly poor step coverages are realized for conditions in which the reactor is feed rate limited, or starved, for tungsten hexafluoride. Moreover, the model also predicts that under certain conditions significant film composition variation may exist along the sidewalls within a given feature. We have confirmed this behavior using careful Auger analysis of the film deposited on the sidewalls.",

author = "Gregory Raupp and Cale, {Timothy S.} and Jain, {Manoj K.} and Bridget Rogers and Damodaran Srinivas",

note = "Funding Information: Professor Raupp and Cale gratefully acknowledge the partial support of this work by the National Science Foundation and the Semiconductor Research Corporation. We also thank Dr. Ann Yates, who facilitated collection of the X-ray data, which were obtained on equipment purchased under National Science Foundation Grant DMR-8406823.",

year = "1990",

doi = "10.1016/S0040-6090(05)80032-X",

language = "English (US)",

volume = "193-194",

pages = "234--243",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "PART 1",

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TY - JOUR

T1 - Step coverage of tungsten silicide films deposited bylow pressure dichlorosilane reduction of tungsten hexafluoride

AU - Raupp, Gregory

AU - Cale, Timothy S.

AU - Jain, Manoj K.

AU - Rogers, Bridget

AU - Srinivas, Damodaran

N1 - Funding Information: Professor Raupp and Cale gratefully acknowledge the partial support of this work by the National Science Foundation and the Semiconductor Research Corporation. We also thank Dr. Ann Yates, who facilitated collection of the X-ray data, which were obtained on equipment purchased under National Science Foundation Grant DMR-8406823.

PY - 1990

Y1 - 1990

N2 - Dichlorosilane reduction of tungsten hexafluoride was used to deposit tungstensilicide (WSix, x = 1-2.4) in rectangular trenches on patterned wafers at various temperatures using a commercial-scale Spectrum chemical vapour deposition cold wall single-wafer reactor. Step coverages of the as-deposited films determined using cross-sectional scanning electron micrographs were in qualitative agreement with predictions of a continuum diffusion-reaction model of deposition within the features. The model correctly predicts the observed trend that step coverage degrades with increasing wafer temperature. Particularly poor step coverages are realized for conditions in which the reactor is feed rate limited, or starved, for tungsten hexafluoride. Moreover, the model also predicts that under certain conditions significant film composition variation may exist along the sidewalls within a given feature. We have confirmed this behavior using careful Auger analysis of the film deposited on the sidewalls.

AB - Dichlorosilane reduction of tungsten hexafluoride was used to deposit tungstensilicide (WSix, x = 1-2.4) in rectangular trenches on patterned wafers at various temperatures using a commercial-scale Spectrum chemical vapour deposition cold wall single-wafer reactor. Step coverages of the as-deposited films determined using cross-sectional scanning electron micrographs were in qualitative agreement with predictions of a continuum diffusion-reaction model of deposition within the features. The model correctly predicts the observed trend that step coverage degrades with increasing wafer temperature. Particularly poor step coverages are realized for conditions in which the reactor is feed rate limited, or starved, for tungsten hexafluoride. Moreover, the model also predicts that under certain conditions significant film composition variation may exist along the sidewalls within a given feature. We have confirmed this behavior using careful Auger analysis of the film deposited on the sidewalls.

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VL - 193-194

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EP - 243

JO - Thin Solid Films

JF - Thin Solid Films

IS - PART 1

ER -

Step coverage of tungsten silicide films deposited bylow pressure dichlorosilane reduction of tungsten hexafluoride

Abstract

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