Step coverage of tungsten silicide films deposited bylow pressure dichlorosilane reduction of tungsten hexafluoride

Gregory Raupp, Timothy S. Cale, Manoj K. Jain, Bridget Rogers, Damodaran Srinivas

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Dichlorosilane reduction of tungsten hexafluoride was used to deposit tungstensilicide (WSix, x = 1-2.4) in rectangular trenches on patterned wafers at various temperatures using a commercial-scale Spectrum chemical vapour deposition cold wall single-wafer reactor. Step coverages of the as-deposited films determined using cross-sectional scanning electron micrographs were in qualitative agreement with predictions of a continuum diffusion-reaction model of deposition within the features. The model correctly predicts the observed trend that step coverage degrades with increasing wafer temperature. Particularly poor step coverages are realized for conditions in which the reactor is feed rate limited, or starved, for tungsten hexafluoride. Moreover, the model also predicts that under certain conditions significant film composition variation may exist along the sidewalls within a given feature. We have confirmed this behavior using careful Auger analysis of the film deposited on the sidewalls.

Original languageEnglish (US)
Pages (from-to)234-243
Number of pages10
JournalThin Solid Films
Volume193-194
Issue numberPART 1
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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