Step bunching, chemical ordering, and diffusivity in Si 1-yC y heteroepitaxy

F. Grosse, E. T. Croke, M. F. Gyure, M. Floyd, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth of Si 1-yC y on Si(001) and Si(118) surfaces is investigated experimentally and theoretically. A step instability is found on (118) surfaces leading to step bunching, under low C-concentrations. This behavior is explained by increased diffusivity of Si dimers in the vicinity of carbon. Self adjusting step bunches are found in kinetic Monte Carlo simulations with ordering of the carbon along nearly (001) planes. Experimental parameters (i.e., temperature, flux rate, and tilt angle of the substrate), which are controllable experimentally, can be used to adjust the length scale of the step bunching.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.M. Millunchick, A.L. Barabasi, N.A. Modine, E.D. Jones
Pages65-69
Number of pages5
Volume618
StatePublished - 2000
Externally publishedYes
EventMorphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Other

OtherMorphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films
CountryUnited States
CitySan Francisco, CA
Period4/24/004/27/00

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Grosse, F., Croke, E. T., Gyure, M. F., Floyd, M., & Smith, D. (2000). Step bunching, chemical ordering, and diffusivity in Si 1-yC y heteroepitaxy In J. M. Millunchick, A. L. Barabasi, N. A. Modine, & E. D. Jones (Eds.), Materials Research Society Symposium - Proceedings (Vol. 618, pp. 65-69)