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Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device
Xuanqi Huang, Runchen Fang, Chen Yang, Kai Fu, Houqiang Fu, Hong Chen, Tsung Han Yang, Jingan Zhou, Jossue Montes, Michael Kozicki, Hugh Barnaby, Baoshun Zhang, Yuji Zhao
- Solid State Electronics Research Center (CSSER)
- Materials Science and Engineering
- Electrical Engineering
- Nano-Electronics, Arizona Institute of (AINE)
- Applied Nanoionics, Center for (CANi)
- Embedded Systems, Consortium for (CES)
- Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)
- Knowledge Enterprise (KE)
- Connection One (C1)
Research output: Contribution to journal › Article › peer-review
12
Scopus
citations