Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Xuanqi Huang, Runchen Fang, Chen Yang, Kai Fu, Houqiang Fu, Hong Chen, Tsung Han Yang, Jingan Zhou, Jossue Montes, Michael Kozicki, Hugh Barnaby, Baoshun Zhang, Yuji Zhao

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Engineering & Materials Science