Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Xuanqi Huang, Runchen Fang, Chen Yang, Kai Fu, Houqiang Fu, Hong Chen, Tsung Han Yang, Jingan Zhou, Jossue Montes, Michael Kozicki, Hugh Barnaby, Baoshun Zhang, Yuji Zhao

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO2-based threshold switching devices in series with the source. The SiO2-based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 105 in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10-5 μA μm-1) and a high I ON/I OFF ratio (>107). Moreover, with the SiO2-based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. This steep-slope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III-V and are of potential interest for the development of power switching and high frequency devices.

Original languageEnglish (US)
Article number215201
JournalNanotechnology
Volume30
Issue number21
DOIs
StatePublished - Mar 13 2019

Keywords

  • Boltzmann limit
  • gallium nitride
  • steep slope
  • threshold switching
  • transistor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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