Abstract

We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO 2 -based threshold switching devices in series with the source. The SiO 2 -based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 10 5 in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10 -5 μA μm -1 ) and a high I ON /I OFF ratio (>10 7 ). Moreover, with the SiO 2 -based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. This steep-slope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III-V and are of potential interest for the development of power switching and high frequency devices.

Original languageEnglish (US)
Article number215201
JournalNanotechnology
Volume30
Issue number21
DOIs
StatePublished - Mar 13 2019

Fingerprint

High electron mobility transistors
Field effect transistors
Oxides
Transistors
Management information systems
Threshold voltage
Leakage currents
aluminum gallium nitride
Demonstrations

Keywords

  • Boltzmann limit
  • gallium nitride
  • steep slope
  • threshold switching
  • transistor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device. / Huang, Xuanqi; Fang, Runchen; Yang, Chen; Fu, Kai; Fu, Houqiang; Chen, Hong; Yang, Tsung Han; Zhou, Jingan; Montes, Jossue; Kozicki, Michael; Barnaby, Hugh; Zhang, Baoshun; Zhao, Yuji.

In: Nanotechnology, Vol. 30, No. 21, 215201, 13.03.2019.

Research output: Contribution to journalArticle

Huang, X, Fang, R, Yang, C, Fu, K, Fu, H, Chen, H, Yang, TH, Zhou, J, Montes, J, Kozicki, M, Barnaby, H, Zhang, B & Zhao, Y 2019, 'Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device', Nanotechnology, vol. 30, no. 21, 215201. https://doi.org/10.1088/1361-6528/ab0484
Huang, Xuanqi ; Fang, Runchen ; Yang, Chen ; Fu, Kai ; Fu, Houqiang ; Chen, Hong ; Yang, Tsung Han ; Zhou, Jingan ; Montes, Jossue ; Kozicki, Michael ; Barnaby, Hugh ; Zhang, Baoshun ; Zhao, Yuji. / Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device. In: Nanotechnology. 2019 ; Vol. 30, No. 21.
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AU - Chen, Hong

AU - Yang, Tsung Han

AU - Zhou, Jingan

AU - Montes, Jossue

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AU - Barnaby, Hugh

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