Statistical variation analysis of sub- 5-nm -sized electron-beam-induced deposits

W. F. Van Dorp, B. Van Someren, C. W. Hagen, P. Kruit, Peter Crozier

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We report on the statistical analysis of the variations in the size and position of sub- 5 nm tungsten-containing dots in regular arrays deposited by electron-beam-induced deposition. Full widths at half maximum of the dots are 4.2 and 2.0 nm in average. It can be observed in the recorded annular dark-field images that there is a variation in intensity for these dots. We have analyzed these variations and it is found that the relative standard deviation for the mass per dot is 0.092 for the 4.2 nm dots and 0.26 for the 2. 0 nm dots. Comparing this to a relative standard deviation in the estimated number of precursor molecules that are pinned down per dot of 0.041 for the 4.2 nm dots and 0.11 for the 2.0 nm dots, it appears that the dot-to-dot variation in mass for both dot sizes compares reasonably well with the values expected from Poisson statistics on the number of molecules per dot. It can be concluded that at these dimensions, the statistics on the number of pinned precursor molecules dominates the control of feature sizes.

Original languageEnglish (US)
Pages (from-to)618-622
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number2
DOIs
StatePublished - Mar 2006

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Electron beams
Statistical methods
Deposits
deposits
electron beams
Molecules
Statistics
standard deviation
statistics
Full width at half maximum
molecules
Tungsten
statistical analysis
tungsten

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Statistical variation analysis of sub- 5-nm -sized electron-beam-induced deposits. / Van Dorp, W. F.; Van Someren, B.; Hagen, C. W.; Kruit, P.; Crozier, Peter.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 2, 03.2006, p. 618-622.

Research output: Contribution to journalArticle

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