Statistical analysis of the impact of charge traps in p-type MOSFETs via particle-based Monte Carlo device simulations

Alan C.J. Rossetto, Vinicius V.A. Camargo, Thiago H. Both, Dragica Vasileska, Gilson I. Wirth

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, statistical analysis of the static impact of charge traps on the drain current of p-type metal–oxide–semiconductor field-effect transistors is presented. The study was carried out by employing a 3-D particle-based Monte Carlo device simulator, which is capable of accounting for the interplay between charge traps and the random dopant fluctuation effect. It was observed that the impact of a single charged trap on the transistor’s on-current is strongly dependent on the trap position along the channel length, on trap depth into the gate oxide, and on the trap position along the channel width. The current deviation estimated from statistical simulations is shown to be exponentially distributed, in agreement with experimental data from the literature. Results are also compared with uniform channel theory predictions.

Original languageEnglish (US)
Pages (from-to)648-657
Number of pages10
JournalJournal of Computational Electronics
Volume19
Issue number2
DOIs
StatePublished - Jun 1 2020

Keywords

  • BTI
  • Monte Carlo
  • Numerical simulation
  • Oxide trap
  • RTN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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