Statistical analysis of the impact of charge traps in p-type MOSFETs via particle-based Monte Carlo device simulations

Alan C.J. Rossetto, Vinicius V.A. Camargo, Thiago H. Both, Dragica Vasileska, Gilson I. Wirth

    Research output: Contribution to journalArticle

    Abstract

    In this paper, statistical analysis of the static impact of charge traps on the drain current of p-type metal–oxide–semiconductor field-effect transistors is presented. The study was carried out by employing a 3-D particle-based Monte Carlo device simulator, which is capable of accounting for the interplay between charge traps and the random dopant fluctuation effect. It was observed that the impact of a single charged trap on the transistor’s on-current is strongly dependent on the trap position along the channel length, on trap depth into the gate oxide, and on the trap position along the channel width. The current deviation estimated from statistical simulations is shown to be exponentially distributed, in agreement with experimental data from the literature. Results are also compared with uniform channel theory predictions.

    Original languageEnglish (US)
    JournalJournal of Computational Electronics
    DOIs
    StateAccepted/In press - Jan 1 2020

    Keywords

    • BTI
    • Monte Carlo
    • Numerical simulation
    • Oxide trap
    • RTN

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Modeling and Simulation
    • Electrical and Electronic Engineering

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