Abstract

Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.

Original languageEnglish (US)
Pages (from-to)27-33
Number of pages7
JournalSolid-State Electronics
Volume106
DOIs
StatePublished - 2015

Fingerprint

Metallizing
impedance
Glass
cells
glass
Carrier mobility
Solid electrolytes
Metal ions
solid electrolytes
Energy gap
Permittivity
calibrating
carrier mobility
Electric fields
Doping (additives)
Ions
affinity
metal ions
dissolving
Electrodes

Keywords

  • Chalcogenide
  • Impedance
  • Nano-ionic memory
  • Parametric model
  • Programmable metallization cells
  • Resistive RAM (ReRAM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Static impedance behavior of programmable metallization cells. / Rajabi, S.; Saremi, M.; Barnaby, Hugh; Edwards, A.; Kozicki, Michael; Mitkova, M.; Mahalanabis, D.; Gonzalez Velo, Yago; Mahmud, A.

In: Solid-State Electronics, Vol. 106, 2015, p. 27-33.

Research output: Contribution to journalArticle

Rajabi, S, Saremi, M, Barnaby, H, Edwards, A, Kozicki, M, Mitkova, M, Mahalanabis, D, Gonzalez Velo, Y & Mahmud, A 2015, 'Static impedance behavior of programmable metallization cells', Solid-State Electronics, vol. 106, pp. 27-33. https://doi.org/10.1016/j.sse.2014.12.019
Rajabi, S. ; Saremi, M. ; Barnaby, Hugh ; Edwards, A. ; Kozicki, Michael ; Mitkova, M. ; Mahalanabis, D. ; Gonzalez Velo, Yago ; Mahmud, A. / Static impedance behavior of programmable metallization cells. In: Solid-State Electronics. 2015 ; Vol. 106. pp. 27-33.
@article{4d9ee3c8394d4a8eae2e4ed4c1c72a62,
title = "Static impedance behavior of programmable metallization cells",
abstract = "Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.",
keywords = "Chalcogenide, Impedance, Nano-ionic memory, Parametric model, Programmable metallization cells, Resistive RAM (ReRAM)",
author = "S. Rajabi and M. Saremi and Hugh Barnaby and A. Edwards and Michael Kozicki and M. Mitkova and D. Mahalanabis and {Gonzalez Velo}, Yago and A. Mahmud",
year = "2015",
doi = "10.1016/j.sse.2014.12.019",
language = "English (US)",
volume = "106",
pages = "27--33",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Static impedance behavior of programmable metallization cells

AU - Rajabi, S.

AU - Saremi, M.

AU - Barnaby, Hugh

AU - Edwards, A.

AU - Kozicki, Michael

AU - Mitkova, M.

AU - Mahalanabis, D.

AU - Gonzalez Velo, Yago

AU - Mahmud, A.

PY - 2015

Y1 - 2015

N2 - Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.

AB - Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.

KW - Chalcogenide

KW - Impedance

KW - Nano-ionic memory

KW - Parametric model

KW - Programmable metallization cells

KW - Resistive RAM (ReRAM)

UR - http://www.scopus.com/inward/record.url?scp=84921821843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84921821843&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2014.12.019

DO - 10.1016/j.sse.2014.12.019

M3 - Article

AN - SCOPUS:84921821843

VL - 106

SP - 27

EP - 33

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -