Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions

Chi Yin Cheng, Dragica Vasileska

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this article, we present a novel full-band Monte Carlo device simulator for modeling 4H-SiC power electronic devices in which, for the first time, the Coulomb interactions have been accounted for through a real-space molecular dynamics approach. Proper treatment of the electron-electron interactions is critical for modeling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain on a physical basis the steady-state and the switching behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology.

Original languageEnglish (US)
Article number9144264
Pages (from-to)3705-3710
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume67
Issue number9
DOIs
StatePublished - Sep 2020

Keywords

  • 4H-SiC
  • full-band device simulator
  • power vertical double-diffused MOSFET (VDMOS)
  • real-space treatment of Coulomb interactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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