TY - JOUR
T1 - Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions
AU - Cheng, Chi Yin
AU - Vasileska, Dragica
N1 - Funding Information:
Manuscript received June 4, 2020; accepted July 1, 2020. Date of publication July 20, 2020; date of current version August 21, 2020. The work of Dragica Vasileska was supported by the National Science Foundation (NSF) under Contract ECCS 1542160. The review of this article was arranged by Editor K. Kalna. (Corresponding author: Chi-Yin Cheng.) The authors are with the School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706 USA (e-mail: ccheng45@asu.edu; vasileska@asu.edu).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2020/9
Y1 - 2020/9
N2 - In this article, we present a novel full-band Monte Carlo device simulator for modeling 4H-SiC power electronic devices in which, for the first time, the Coulomb interactions have been accounted for through a real-space molecular dynamics approach. Proper treatment of the electron-electron interactions is critical for modeling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain on a physical basis the steady-state and the switching behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology.
AB - In this article, we present a novel full-band Monte Carlo device simulator for modeling 4H-SiC power electronic devices in which, for the first time, the Coulomb interactions have been accounted for through a real-space molecular dynamics approach. Proper treatment of the electron-electron interactions is critical for modeling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain on a physical basis the steady-state and the switching behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology.
KW - 4H-SiC
KW - full-band device simulator
KW - power vertical double-diffused MOSFET (VDMOS)
KW - real-space treatment of Coulomb interactions
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U2 - 10.1109/TED.2020.3007368
DO - 10.1109/TED.2020.3007368
M3 - Article
AN - SCOPUS:85090760978
SN - 0018-9383
VL - 67
SP - 3705
EP - 3710
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
M1 - 9144264
ER -