Abstract

Quaternary In0.12Al0.29Ga0.59N and In0.10Al0.02Ga0.88N layers ∼200 nm thick were grown on (0 0 0 1) GaN/sapphire composites using metalorganic chemical vapor deposition. The layers were studied using transmission electron microscopy (TEM). TEM results indicate that the quaternary layers contain high-density stacking faults (SFs). Weak-beam dark-field analysis coupled with high-resolution electron microscopy reveal that SFs have zinc-blende structures bounded by Shockley partials. Compared with In0.10Ga0.90N layers, SF density increases substantially in the In0.10Al0.02Ga0.88N layer with only 2% additional Al. Z-contrast annular dark-field images showed that SFs are Al-rich in the In0.12Al0.29Ga0.59N layer, but not in the In0.10Al0.02Ga0.88N layer. Two reference AlxGa1-xN layers were grown using identical conditions except the carrier gases. Using H2 carrier gas resulted in a ∼400 nm thick Al0.45Ga0.55N layer with no SFs, while using N2 carrier gas resulted in a ∼250 nm thick Al0.25Ga0.75N layer with SFs. It is suggested that the low surface mobility of (CH3)2Al:NH2 species in the N2 environment led to SF formation in the quaternary layers.

Original languageEnglish (US)
Pages (from-to)4036-4045
Number of pages10
JournalActa Materialia
Volume56
Issue number15
DOIs
StatePublished - Sep 2008

Fingerprint

Stacking faults
Gases
Transmission electron microscopy
Aluminum Oxide
High resolution electron microscopy
Metallorganic chemical vapor deposition
Sapphire
Zinc
Composite materials

Keywords

  • Metalorganic chemical vapor deposition (MOCVD)
  • Nitrides
  • Stacking faults
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Metals and Alloys

Cite this

Stacking faults in quaternary InxAlyGa1-x-yN layers. / Meng, F. Y.; Rao, M.; Newman, Nathan; Carpenter, Ray; Mahajan, S.

In: Acta Materialia, Vol. 56, No. 15, 09.2008, p. 4036-4045.

Research output: Contribution to journalArticle

Meng, F. Y. ; Rao, M. ; Newman, Nathan ; Carpenter, Ray ; Mahajan, S. / Stacking faults in quaternary InxAlyGa1-x-yN layers. In: Acta Materialia. 2008 ; Vol. 56, No. 15. pp. 4036-4045.
@article{119f5526b7b94e41afb2614f4fe275ed,
title = "Stacking faults in quaternary InxAlyGa1-x-yN layers",
abstract = "Quaternary In0.12Al0.29Ga0.59N and In0.10Al0.02Ga0.88N layers ∼200 nm thick were grown on (0 0 0 1) GaN/sapphire composites using metalorganic chemical vapor deposition. The layers were studied using transmission electron microscopy (TEM). TEM results indicate that the quaternary layers contain high-density stacking faults (SFs). Weak-beam dark-field analysis coupled with high-resolution electron microscopy reveal that SFs have zinc-blende structures bounded by Shockley partials. Compared with In0.10Ga0.90N layers, SF density increases substantially in the In0.10Al0.02Ga0.88N layer with only 2{\%} additional Al. Z-contrast annular dark-field images showed that SFs are Al-rich in the In0.12Al0.29Ga0.59N layer, but not in the In0.10Al0.02Ga0.88N layer. Two reference AlxGa1-xN layers were grown using identical conditions except the carrier gases. Using H2 carrier gas resulted in a ∼400 nm thick Al0.45Ga0.55N layer with no SFs, while using N2 carrier gas resulted in a ∼250 nm thick Al0.25Ga0.75N layer with SFs. It is suggested that the low surface mobility of (CH3)2Al:NH2 species in the N2 environment led to SF formation in the quaternary layers.",
keywords = "Metalorganic chemical vapor deposition (MOCVD), Nitrides, Stacking faults, Transmission electron microscopy (TEM)",
author = "Meng, {F. Y.} and M. Rao and Nathan Newman and Ray Carpenter and S. Mahajan",
year = "2008",
month = "9",
doi = "10.1016/j.actamat.2008.04.026",
language = "English (US)",
volume = "56",
pages = "4036--4045",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",
number = "15",

}

TY - JOUR

T1 - Stacking faults in quaternary InxAlyGa1-x-yN layers

AU - Meng, F. Y.

AU - Rao, M.

AU - Newman, Nathan

AU - Carpenter, Ray

AU - Mahajan, S.

PY - 2008/9

Y1 - 2008/9

N2 - Quaternary In0.12Al0.29Ga0.59N and In0.10Al0.02Ga0.88N layers ∼200 nm thick were grown on (0 0 0 1) GaN/sapphire composites using metalorganic chemical vapor deposition. The layers were studied using transmission electron microscopy (TEM). TEM results indicate that the quaternary layers contain high-density stacking faults (SFs). Weak-beam dark-field analysis coupled with high-resolution electron microscopy reveal that SFs have zinc-blende structures bounded by Shockley partials. Compared with In0.10Ga0.90N layers, SF density increases substantially in the In0.10Al0.02Ga0.88N layer with only 2% additional Al. Z-contrast annular dark-field images showed that SFs are Al-rich in the In0.12Al0.29Ga0.59N layer, but not in the In0.10Al0.02Ga0.88N layer. Two reference AlxGa1-xN layers were grown using identical conditions except the carrier gases. Using H2 carrier gas resulted in a ∼400 nm thick Al0.45Ga0.55N layer with no SFs, while using N2 carrier gas resulted in a ∼250 nm thick Al0.25Ga0.75N layer with SFs. It is suggested that the low surface mobility of (CH3)2Al:NH2 species in the N2 environment led to SF formation in the quaternary layers.

AB - Quaternary In0.12Al0.29Ga0.59N and In0.10Al0.02Ga0.88N layers ∼200 nm thick were grown on (0 0 0 1) GaN/sapphire composites using metalorganic chemical vapor deposition. The layers were studied using transmission electron microscopy (TEM). TEM results indicate that the quaternary layers contain high-density stacking faults (SFs). Weak-beam dark-field analysis coupled with high-resolution electron microscopy reveal that SFs have zinc-blende structures bounded by Shockley partials. Compared with In0.10Ga0.90N layers, SF density increases substantially in the In0.10Al0.02Ga0.88N layer with only 2% additional Al. Z-contrast annular dark-field images showed that SFs are Al-rich in the In0.12Al0.29Ga0.59N layer, but not in the In0.10Al0.02Ga0.88N layer. Two reference AlxGa1-xN layers were grown using identical conditions except the carrier gases. Using H2 carrier gas resulted in a ∼400 nm thick Al0.45Ga0.55N layer with no SFs, while using N2 carrier gas resulted in a ∼250 nm thick Al0.25Ga0.75N layer with SFs. It is suggested that the low surface mobility of (CH3)2Al:NH2 species in the N2 environment led to SF formation in the quaternary layers.

KW - Metalorganic chemical vapor deposition (MOCVD)

KW - Nitrides

KW - Stacking faults

KW - Transmission electron microscopy (TEM)

UR - http://www.scopus.com/inward/record.url?scp=48449100547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48449100547&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2008.04.026

DO - 10.1016/j.actamat.2008.04.026

M3 - Article

VL - 56

SP - 4036

EP - 4045

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

IS - 15

ER -