Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission

Feng Wu; Yuji Zhao; Alexey Romanov; Steven P. Denbaars; Shuji Nakamura; James S. Speck

doi:10.1063/1.4871512

Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission

Feng Wu, Yuji Zhao, Alexey Romanov, Steven P. Denbaars, Shuji Nakamura, James S. Speck

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The microstructure of InGaN single quantum wells (QWs) grown in semipolar (202̄1̄) orientation on GaN substrates was studied by transmission electron microscopy. Stress relaxation in the lattice mismatch In _xGa_{1- x}N layer was realized by forming partial misfit dislocations associated with basal plane stacking faults (BPSFs). For given composition x = 0.24, BPSFs formation was observed when the QW thickness exceeded 4 nm. The high density of partial threading dislocations that bound the BPSFs is detrimental to light-emitting device performance. Interface roughening (faceting) was observed for both upper and lower QW interfaces (more pronounced for upper interface) and was found to increase with the thickness of the QW. BPSFs had a tendency to nucleate at roughened interface valleys.

Original language	English (US)
Article number	151901
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4871512
State	Published - Apr 14 2014
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4871512

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title = "Stacking faults and interface rougheningin semipolar (20 2{\= } 1{\= }) single InGaN quantum wells for long wavelength emission",

abstract = "The microstructure of InGaN single quantum wells (QWs) grown in semipolar (20{\=2}{\=1}) orientation on GaN substrates was studied by transmission electron microscopy. Stress relaxation in the lattice mismatch In xGa1- xN layer was realized by forming partial misfit dislocations associated with basal plane stacking faults (BPSFs). For given composition x = 0.24, BPSFs formation was observed when the QW thickness exceeded 4 nm. The high density of partial threading dislocations that bound the BPSFs is detrimental to light-emitting device performance. Interface roughening (faceting) was observed for both upper and lower QW interfaces (more pronounced for upper interface) and was found to increase with the thickness of the QW. BPSFs had a tendency to nucleate at roughened interface valleys.",

author = "Feng Wu and Yuji Zhao and Alexey Romanov and Denbaars, {Steven P.} and Shuji Nakamura and Speck, {James S.}",

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T1 - Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission

AU - Wu, Feng

AU - Zhao, Yuji

AU - Romanov, Alexey

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

AU - Speck, James S.

PY - 2014/4/14

Y1 - 2014/4/14

N2 - The microstructure of InGaN single quantum wells (QWs) grown in semipolar (202̄1̄) orientation on GaN substrates was studied by transmission electron microscopy. Stress relaxation in the lattice mismatch In xGa1- xN layer was realized by forming partial misfit dislocations associated with basal plane stacking faults (BPSFs). For given composition x = 0.24, BPSFs formation was observed when the QW thickness exceeded 4 nm. The high density of partial threading dislocations that bound the BPSFs is detrimental to light-emitting device performance. Interface roughening (faceting) was observed for both upper and lower QW interfaces (more pronounced for upper interface) and was found to increase with the thickness of the QW. BPSFs had a tendency to nucleate at roughened interface valleys.

AB - The microstructure of InGaN single quantum wells (QWs) grown in semipolar (202̄1̄) orientation on GaN substrates was studied by transmission electron microscopy. Stress relaxation in the lattice mismatch In xGa1- xN layer was realized by forming partial misfit dislocations associated with basal plane stacking faults (BPSFs). For given composition x = 0.24, BPSFs formation was observed when the QW thickness exceeded 4 nm. The high density of partial threading dislocations that bound the BPSFs is detrimental to light-emitting device performance. Interface roughening (faceting) was observed for both upper and lower QW interfaces (more pronounced for upper interface) and was found to increase with the thickness of the QW. BPSFs had a tendency to nucleate at roughened interface valleys.

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Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission

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