Stacking fault pyramid formation and energetics in silicon-on-insulator material formed by multiple cycles of oxygen implantation and annealing

J. D. Lee, J. C. Park, D. Venables, Stephen Krause, P. Roitman

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The defect microstructure of silicon-on-insulator wafers produced by multiple cycles of oxygen implantation and annealing was studied with transmission electron microscopy. The dominant defects are stacking fault pyramids (SFPs), 30-100 nm wide, located at the upper buried oxide interface at a density of ∼106 cm-2. The defects are produced by the expansion and interaction of narrow stacking fault (NSF) ribbons pinned to residual precipitates in the top silicon layer. Consideration of the energetics of the transformation from a collection of four NSF ribbons to a single SFP indicates that the reaction is energetically favorable below a critical NSF length. Thus small defects are stable as SFPs while large defects are stable as NSF ribbons.

Original languageEnglish (US)
Pages (from-to)3330-3332
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number24
DOIs
StatePublished - 1993

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pyramids
crystal defects
implantation
insulators
cycles
annealing
silicon
oxygen
defects
ribbons
precipitates
wafers
transmission electron microscopy
microstructure
expansion
oxides
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Stacking fault pyramid formation and energetics in silicon-on-insulator material formed by multiple cycles of oxygen implantation and annealing. / Lee, J. D.; Park, J. C.; Venables, D.; Krause, Stephen; Roitman, P.

In: Applied Physics Letters, Vol. 63, No. 24, 1993, p. 3330-3332.

Research output: Contribution to journalArticle

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