Stacking-fault model for the Si(111)-(7×7) surface

Peter Bennett, L. C. Feldman, Y. Kuk, E. G. McRae, J. E. Rowe

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

We propose a model for the geometric structure of the Si(111)-(7×7) surface based on a stacking fault in the surface layers. The model quantitatively accounts for existing ion-channeling data. Additional evidence for the stacking fault is given by constant-momentum-transfer averaged low-energy electron-diffraction data. A specific class of superlattice structures is suggested by the occurrence of two nearly equivalent stacking sequences having triangular symmetry.

Original languageEnglish (US)
Pages (from-to)3656-3659
Number of pages4
JournalPhysical Review B
Volume28
Issue number6
DOIs
StatePublished - 1983
Externally publishedYes

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Stacking faults
crystal defects
Momentum transfer
Low energy electron diffraction
momentum transfer
surface layers
electron diffraction
occurrences
Ions
symmetry
ions
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bennett, P., Feldman, L. C., Kuk, Y., McRae, E. G., & Rowe, J. E. (1983). Stacking-fault model for the Si(111)-(7×7) surface. Physical Review B, 28(6), 3656-3659. https://doi.org/10.1103/PhysRevB.28.3656

Stacking-fault model for the Si(111)-(7×7) surface. / Bennett, Peter; Feldman, L. C.; Kuk, Y.; McRae, E. G.; Rowe, J. E.

In: Physical Review B, Vol. 28, No. 6, 1983, p. 3656-3659.

Research output: Contribution to journalArticle

Bennett, P, Feldman, LC, Kuk, Y, McRae, EG & Rowe, JE 1983, 'Stacking-fault model for the Si(111)-(7×7) surface', Physical Review B, vol. 28, no. 6, pp. 3656-3659. https://doi.org/10.1103/PhysRevB.28.3656
Bennett, Peter ; Feldman, L. C. ; Kuk, Y. ; McRae, E. G. ; Rowe, J. E. / Stacking-fault model for the Si(111)-(7×7) surface. In: Physical Review B. 1983 ; Vol. 28, No. 6. pp. 3656-3659.
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