Stacking-fault model for the Si(111)-(7×7) surface

P. A. Bennett, L. C. Feldman, Y. Kuk, E. G. McRae, J. E. Rowe

Research output: Contribution to journalArticle

70 Scopus citations


We propose a model for the geometric structure of the Si(111)-(7×7) surface based on a stacking fault in the surface layers. The model quantitatively accounts for existing ion-channeling data. Additional evidence for the stacking fault is given by constant-momentum-transfer averaged low-energy electron-diffraction data. A specific class of superlattice structures is suggested by the occurrence of two nearly equivalent stacking sequences having triangular symmetry.

Original languageEnglish (US)
Pages (from-to)3656-3659
Number of pages4
JournalPhysical Review B
Issue number6
StatePublished - Jan 1 1983
Externally publishedYes


ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bennett, P. A., Feldman, L. C., Kuk, Y., McRae, E. G., & Rowe, J. E. (1983). Stacking-fault model for the Si(111)-(7×7) surface. Physical Review B, 28(6), 3656-3659.