Stable p- and n-type doping of few-layer graphene/graphite

Xiuqing Meng, Sefaattin Tongay, Jun Kang, Zhanghui Chen, Fengmin Wu, Shu Shen Li, Jian Bai Xia, Jingbo Li, Junqiao Wu

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

ZnMg and NbCl5 were intercalated in graphite and the presence of such molecules between the graphene sheets results in n- and p-type doping, respectively. The doping effect is confirmed by Hall and Raman measurements and the intercalation process is monitored by scanning tunneling microscopy. After intercalation the carrier concentration increase almost an order of magnitude and reaches values as high as 1019and 1018 cm-3 for p- and n-type doping, respectively. For higher intercalation times, the intercalated graphite turns back to be as ordered as pristine one as evidenced by the reduction in the D peak in Raman measurements. Intercalation compounds show remarkable stability allowing us to permanently tune the physical properties of few-layer graphite. Our study has provided a new route to produce stable and functional graphite intercalation compounds and the results can be applied to other graphitic structures such as few-layer graphene on SiC.

Original languageEnglish (US)
Pages (from-to)507-514
Number of pages8
JournalCarbon
Volume57
DOIs
StatePublished - Jun 1 2013
Externally publishedYes

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ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Meng, X., Tongay, S., Kang, J., Chen, Z., Wu, F., Li, S. S., Xia, J. B., Li, J., & Wu, J. (2013). Stable p- and n-type doping of few-layer graphene/graphite. Carbon, 57, 507-514. https://doi.org/10.1016/j.carbon.2013.02.028