The inventors have formed amine adducts of tri-isobutyl-aluminum (TIBA) and have demonstrated their potential use as precursors for chemical vapro deposition (CVD) of aluminum for interconnect metalliztion in integrated circuit circuits. TIBA is an attractive precursor, because it is inexpensive and can yield aluminum films of high quality; however, it decomposes at the temperatures required for its use as a CVD precursor. It is also pyrophoric. pyrophoric. The inventors have found adducts of TIBA with tri-methyl-amine (TMA) and di-methyl-ethyl-amine (DMEA), which are more stable than TIBA and promise to be less dangerous. Our initial CVD experiments indicate that these precursors can yield high quality aluminum films.
|Original language||English (US)|
|State||Published - Jan 1 1900|