Stability of ensembles of Ge/Si(100) islands

Y. Zhang, Jeffery Drucker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have investigated the stability of ensembles of Ge/Si(100) islands by annealing at their growth temperature. Islands grown by molecular beam epitaxy at temperatures of 450, 550, 600 and 650°C were annealed for times between 5 and 120 minutes. Small, pure Ge hut clusters, bound by {105} facets appear to be extremely stable structures, surviving the longest anneals with no apparent coarsening. Dome clusters, however, coarsen. Large alloyed hut clusters, apparent in as-grown samples only for growth temperatures greater than 600°C, appear during annealing at 450 and 550°C. During anneals at 550 and 650°C, we observe novel coarsening behavior. Arrays of crystallographically oriented, alloyed hut clusters are formed which result from the dissolution of large, alloyed dome clusters.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.M. Millunchick, A.L. Barabasi, N.A. Modine, E.D. Jones
Pages123-128
Number of pages6
Volume618
StatePublished - 2000
Externally publishedYes
EventMorphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Other

OtherMorphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films
CountryUnited States
CitySan Francisco, CA
Period4/24/004/27/00

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Zhang, Y., & Drucker, J. (2000). Stability of ensembles of Ge/Si(100) islands. In J. M. Millunchick, A. L. Barabasi, N. A. Modine, & E. D. Jones (Eds.), Materials Research Society Symposium - Proceedings (Vol. 618, pp. 123-128)