Abstract
We have investigated the stability of ensembles of Ge/Si(100) islands by annealing at their growth temperature. Islands grown by molecular beam epitaxy at temperatures of 450, 550, 600 and 650°C were annealed for times between 5 and 120 minutes. Small, pure Ge hut clusters, bound by {105} facets appear to be extremely stable structures, surviving the longest anneals with no apparent coarsening. Dome clusters, however, coarsen. Large alloyed hut clusters, apparent in as-grown samples only for growth temperatures greater than 600°C, appear during annealing at 450 and 550°C. During anneals at 550 and 650°C, we observe novel coarsening behavior. Arrays of crystallographically oriented, alloyed hut clusters are formed which result from the dissolution of large, alloyed dome clusters.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | J.M. Millunchick, A.L. Barabasi, N.A. Modine, E.D. Jones |
| Pages | 123-128 |
| Number of pages | 6 |
| Volume | 618 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 27 2000 |
Other
| Other | Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 4/24/00 → 4/27/00 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials