@inproceedings{5149177005044fd4bb233878a5730d1c,
title = "Stability improvement of a-ZIO TFT circuits using low temperature anneal",
abstract = "Long duration of low temperature thermal anneals show performance and stability enhancement for low-temperature fabricated amorphous zinc-indium-oxide (a-ZIO) thin-film-transistors (TFTs). The turn-on voltage (Von) of 50 hour annealed TFTs shifts by 1.5 V for a positive gate bias stress period of 104 s when compared to a 2.2 V shift for the unannealed TFTs. The performance and stability improvements are attributed to a reduction of the interface trap density and removing of defects states in the band-gap of the a-ZIO.",
keywords = "D, LCD, OLED, TFT, V, V, ZIO, anneal, subthreshold swing",
author = "Aritra Dey and David Allee",
year = "2011",
month = jun,
day = "23",
doi = "10.1109/IRPS.2011.5784601",
language = "English (US)",
isbn = "9781424491117",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "TF.1.1--TF.1.4",
booktitle = "2011 International Reliability Physics Symposium, IRPS 2011",
note = "49th International Reliability Physics Symposium, IRPS 2011 ; Conference date: 10-04-2011 Through 14-04-2011",
}