Stability improvement of a-ZIO TFT circuits using low temperature anneal

Aritra Dey, David Allee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Long duration of low temperature thermal anneals show performance and stability enhancement for low-temperature fabricated amorphous zinc-indium-oxide (a-ZIO) thin-film-transistors (TFTs). The turn-on voltage (Von) of 50 hour annealed TFTs shifts by 1.5 V for a positive gate bias stress period of 104 s when compared to a 2.2 V shift for the unannealed TFTs. The performance and stability improvements are attributed to a reduction of the interface trap density and removing of defects states in the band-gap of the a-ZIO.

Original languageEnglish (US)
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
PagesTF.1.1-TF.1.4
DOIs
StatePublished - Jun 23 2011
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: Apr 10 2011Apr 14 2011

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period4/10/114/14/11

Keywords

  • D
  • LCD
  • OLED
  • TFT
  • V
  • V
  • ZIO
  • anneal
  • subthreshold swing

ASJC Scopus subject areas

  • Engineering(all)

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