Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl, Fengyun Wang, Hugh E. Chung, George R. Kunnen, Senpo Yip, Edward H. Lee, Edwin Y B Pun, Gregory Raupp, David Allee, Johnny C. Ho

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

Original languageEnglish (US)
Article number6515612
Pages (from-to)765-767
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number6
DOIs
StatePublished - 2013

Fingerprint

Thin film transistors
Nanowires
Indium arsenide
Drain current
Threshold voltage
indium arsenide

Keywords

  • InAs
  • low-frequency noise
  • nanowire (NW) parallel arrays
  • stability
  • thin-film transistors (TFTs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wahl, R. E., Wang, F., Chung, H. E., Kunnen, G. R., Yip, S., Lee, E. H., ... Ho, J. C. (2013). Stability and low-frequency noise in InAs NW parallel-array thin-film transistors. IEEE Electron Device Letters, 34(6), 765-767. [6515612]. https://doi.org/10.1109/LED.2013.2250896

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors. / Wahl, Richard E.; Wang, Fengyun; Chung, Hugh E.; Kunnen, George R.; Yip, Senpo; Lee, Edward H.; Pun, Edwin Y B; Raupp, Gregory; Allee, David; Ho, Johnny C.

In: IEEE Electron Device Letters, Vol. 34, No. 6, 6515612, 2013, p. 765-767.

Research output: Contribution to journalArticle

Wahl, RE, Wang, F, Chung, HE, Kunnen, GR, Yip, S, Lee, EH, Pun, EYB, Raupp, G, Allee, D & Ho, JC 2013, 'Stability and low-frequency noise in InAs NW parallel-array thin-film transistors', IEEE Electron Device Letters, vol. 34, no. 6, 6515612, pp. 765-767. https://doi.org/10.1109/LED.2013.2250896
Wahl, Richard E. ; Wang, Fengyun ; Chung, Hugh E. ; Kunnen, George R. ; Yip, Senpo ; Lee, Edward H. ; Pun, Edwin Y B ; Raupp, Gregory ; Allee, David ; Ho, Johnny C. / Stability and low-frequency noise in InAs NW parallel-array thin-film transistors. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 6. pp. 765-767.
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