Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl; Fengyun Wang; Hugh E. Chung; George R. Kunnen; Senpo Yip; Edward H. Lee; Edwin Y B Pun; Gregory Raupp; David Allee; Johnny C. Ho

doi:10.1109/LED.2013.2250896

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl, Fengyun Wang, Hugh E. Chung, George R. Kunnen, Senpo Yip, Edward H. Lee, Edwin Y B Pun, Gregory Raupp, David Allee, Johnny C. Ho

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm² V ^-1 s^-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

Original language	English (US)
Article number	6515612
Pages (from-to)	765-767
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/LED.2013.2250896
State	Published - 2013

Keywords

InAs
low-frequency noise
nanowire (NW) parallel arrays
stability
thin-film transistors (TFTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2250896

Cite this

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title = "Stability and low-frequency noise in InAs NW parallel-array thin-film transistors",

abstract = "In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.",

keywords = "InAs, low-frequency noise, nanowire (NW) parallel arrays, stability, thin-film transistors (TFTs)",

author = "Wahl, {Richard E.} and Fengyun Wang and Chung, {Hugh E.} and Kunnen, {George R.} and Senpo Yip and Lee, {Edward H.} and Pun, {Edwin Y B} and Gregory Raupp and David Allee and Ho, {Johnny C.}",

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T1 - Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

AU - Wahl, Richard E.

AU - Wang, Fengyun

AU - Chung, Hugh E.

AU - Kunnen, George R.

AU - Yip, Senpo

AU - Lee, Edward H.

AU - Pun, Edwin Y B

AU - Raupp, Gregory

AU - Allee, David

AU - Ho, Johnny C.

PY - 2013

Y1 - 2013

N2 - In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

AB - In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

KW - InAs

KW - low-frequency noise

KW - nanowire (NW) parallel arrays

KW - stability

KW - thin-film transistors (TFTs)

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JF - IEEE Electron Device Letters

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Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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