Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl, Fengyun Wang, Hugh E. Chung, George R. Kunnen, Senpo Yip, Edward H. Lee, Edwin Y B Pun, Gregory Raupp, David Allee, Johnny C. Ho

Research output: Contribution to journalArticle

6 Scopus citations


In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

Original languageEnglish (US)
Article number6515612
Pages (from-to)765-767
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 3 2013



  • InAs
  • low-frequency noise
  • nanowire (NW) parallel arrays
  • stability
  • thin-film transistors (TFTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Wahl, R. E., Wang, F., Chung, H. E., Kunnen, G. R., Yip, S., Lee, E. H., Pun, E. Y. B., Raupp, G., Allee, D., & Ho, J. C. (2013). Stability and low-frequency noise in InAs NW parallel-array thin-film transistors. IEEE Electron Device Letters, 34(6), 765-767. [6515612].