SRAM leakage suppression by minimizing standby supply voltage

Huifang Qin, Yu Cao, Dejan Markovic, Andrei Vladimirescu, Jan Rabaey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

157 Scopus citations

Abstract

Suppressing the leakage current in memories is critical in low-power design. By reducing the standby supply voltage (VDD) to its limit, which is the Data Retention Voltage (DRV), leakage power can be substantially reduced. This paper explores how low DRV can be in a standard low leakage SRAM module and analyzes how DRV is affected by parameters such as process variations, chip temperature, and transistor sizing. An analytical model for DRV as a function of process and design parameters is presented, and forms the base for further design space explorations. This model is verified using simulations as well as measurements from a 4KB SRAM chip in a 0.13μm technology. It is demonstrated that an SRAM cell state can be preserved at sub-300mV standby VDD, with more than 90% leakage power savings.

Original languageEnglish (US)
Title of host publicationProceedings - 5th International Symposium on Quality Electronic Design, ISQUED 2004
PublisherIEEE Computer Society
Pages55-60
Number of pages6
ISBN (Print)0769520936, 9780769520933
DOIs
StatePublished - 2004
Externally publishedYes
EventProceedings - 5th International Symposium on Quality Electronic Design, ISQED 2004 - San Jose, CA, United States
Duration: Mar 22 2004Mar 24 2004

Publication series

NameProceedings - 5th International Symposium on Quality Electronic Design, ISQUED 2004

Conference

ConferenceProceedings - 5th International Symposium on Quality Electronic Design, ISQED 2004
CountryUnited States
CitySan Jose, CA
Period3/22/043/24/04

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Qin, H., Cao, Y., Markovic, D., Vladimirescu, A., & Rabaey, J. (2004). SRAM leakage suppression by minimizing standby supply voltage. In Proceedings - 5th International Symposium on Quality Electronic Design, ISQUED 2004 (pp. 55-60). (Proceedings - 5th International Symposium on Quality Electronic Design, ISQUED 2004). IEEE Computer Society. https://doi.org/10.1109/isqed.2004.1283650