SRAM cell optimization for low AVT transistors

Lawrence T. Clark, Samuel Leshner, George Tien

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

In this paper, we describe a six-transistor static random access memory (SRAM) cell optimization methodology for transistors with significantly improved matching, while maintaining compatibility with the baseline design. We briefly describe the reduced AVT transistors and show that they allow substantially improved minimum SRAM operating voltage (Vmin) and improved array leakage. Using an efficient design of experiments (DOE) factorial as a pseudo-Monte Carlo generator, points on the tail of the distribution are directly simulated. The highly efficient method is shown to allow optimization and 'what if' scenario investigations. Simulation and silicon results on a 65-nm process as well as simulation results on a 28-nm process are shown.

Original languageEnglish (US)
Title of host publicationProceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2013
Pages57-63
Number of pages7
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2013 - Beijing, China
Duration: Sep 4 2013Sep 6 2013

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)1533-4678

Other

Other2013 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2013
Country/TerritoryChina
CityBeijing
Period9/4/139/6/13

Keywords

  • Low power SRAM
  • mismatch
  • statistical design

ASJC Scopus subject areas

  • General Engineering

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