@inproceedings{42fb3b28f5ae44cc92a53e3ea2a66d9c,
title = "Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics",
abstract = "A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p+ amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.",
keywords = "AlO, CdTe, a-Si, charge carrier lifetime, passivating oxides, photovoltaic cells",
author = "Adam Danielson and Amit Munshi and Arthur Onno and William Weigand and Anna Kindvall and Carey Reich and Yu, {Zhengshan J.} and Jianwei Shi and Darius Kuciauskas and Ali Abbas and Walls, {John M.} and Zachary Holman and Walajabad Sampath",
note = "Funding Information: This material is based upon work supported by the U.S. Department of Energy{\textquoteright}s Office of Energy Efficiency and Renewable Energy (EERE) under Solar Energy Technologies Office (SETO) Agreement Number DE-EE0008552 and SIPS Agreement Number DE-EE0008177. The CSU authors also thank support from NSF{\textquoteright}s Accelerating Innovation Research, and NSF{\textquoteright}s Industry/University Cooperative Research Center programs. At NREL, this work was supported by the U.S. Department of Energy under Contract No. DE-AC36-08-GO28308 with the National Renewable Energy Laboratory. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes. Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",
year = "2019",
month = jun,
doi = "10.1109/PVSC40753.2019.8980466",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3018--3023",
booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",
}