Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

Adam Danielson; Amit Munshi; Arthur Onno; William Weigand; Anna Kindvall; Carey Reich; Zhengshan J. Yu; Jianwei Shi; Darius Kuciauskas; Ali Abbas; John M. Walls; Zachary Holman; Walajabad Sampath

doi:10.1109/PVSC40753.2019.8980466

Sputtered Aluminum Oxide and p⁺ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSe_xTe_1-x and CdTe Photovoltaics

Adam Danielson, Amit Munshi, Arthur Onno, William Weigand, Anna Kindvall, Carey Reich, Zhengshan J. Yu, Jianwei Shi, Darius Kuciauskas, Ali Abbas, John M. Walls, Zachary Holman, Walajabad Sampath

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

A thin layer of Al₂O₃ at the back of CdSe_xT_e1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p⁺ amorphous silicon layer behind the Al₂O₃ bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al₂O₃, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl₂ passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

Original language	English (US)
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3018-3023
Number of pages	6
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980466
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: Jun 16 2019 → Jun 21 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	6/16/19 → 6/21/19

Keywords

AlO
CdTe
a-Si
charge carrier lifetime
passivating oxides
photovoltaic cells

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC40753.2019.8980466

Cite this

Danielson, A., Munshi, A., Onno, A., Weigand, W., Kindvall, A., Reich, C., Yu, Z. J., Shi, J., Kuciauskas, D., Abbas, A., Walls, J. M., Holman, Z., & Sampath, W. (2019). Sputtered Aluminum Oxide and p⁺ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSe_xTe_1-x and CdTe Photovoltaics. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 3018-3023). [8980466] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980466

Sputtered Aluminum Oxide and p⁺ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSe_xTe_1-x and CdTe Photovoltaics. / Danielson, Adam; Munshi, Amit; Onno, Arthur et al.

2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 3018-3023 8980466 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Danielson, A, Munshi, A, Onno, A, Weigand, W, Kindvall, A, Reich, C, Yu, ZJ, Shi, J, Kuciauskas, D, Abbas, A, Walls, JM, Holman, Z & Sampath, W 2019, Sputtered Aluminum Oxide and p⁺ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSe_xTe_1-x and CdTe Photovoltaics. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980466, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 3018-3023, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 6/16/19. https://doi.org/10.1109/PVSC40753.2019.8980466

Danielson A, Munshi A, Onno A, Weigand W, Kindvall A, Reich C et al. Sputtered Aluminum Oxide and p⁺ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSe_xTe_1-x and CdTe Photovoltaics. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 3018-3023. 8980466. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC40753.2019.8980466

Danielson, Adam ; Munshi, Amit ; Onno, Arthur et al. / Sputtered Aluminum Oxide and p⁺ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSe_xTe_1-x and CdTe Photovoltaics. 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 3018-3023 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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abstract = "A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p+ amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.",

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AU - Reich, Carey

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N2 - A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p+ amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

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