Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

Adam Danielson, Amit Munshi, Arthur Onno, William Weigand, Anna Kindvall, Carey Reich, Zhengshan J. Yu, Jianwei Shi, Darius Kuciauskas, Ali Abbas, John M. Walls, Zachary Holman, Walajabad Sampath

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p+ amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages6
ISBN (Electronic)9781728104942
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States


  • AlO
  • CdTe
  • a-Si
  • charge carrier lifetime
  • passivating oxides
  • photovoltaic cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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