Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures

Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs split-gate heterostructure is investigated. We present self-consistent calculations of the electronic structure of the QPC using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange potential is found to be the dominant mechanism driving the local polarization within the QPC. We compute the conductance using the cascading scattering matrix approach and observe the conductance anomaly at ∼0.7 (2e2/h).

Original languageEnglish (US)
Pages (from-to)460-462
Number of pages3
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
StatePublished - Mar 2005

Fingerprint

Spin polarization
Point contacts
aluminum gallium arsenides
Heterojunctions
polarization
Two dimensional electron gas
S matrix theory
Electronic structure
Carrier concentration
electron gas
Scattering
Polarization
anomalies
formalism
electronic structure
gallium arsenide

Keywords

  • 0.7 Anomaly
  • 2DEG
  • Exchange potential
  • Quantum point contact

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures. / Ashok, Ashwin; Akis, Richard; Vasileska, Dragica; Ferry, David K.

In: Microelectronics Journal, Vol. 36, No. 3-6, 03.2005, p. 460-462.

Research output: Contribution to journalArticle

Ashok, Ashwin ; Akis, Richard ; Vasileska, Dragica ; Ferry, David K. / Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures. In: Microelectronics Journal. 2005 ; Vol. 36, No. 3-6. pp. 460-462.
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