Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures

Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs split-gate heterostructure is investigated. We present self-consistent calculations of the electronic structure of the QPC using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange potential is found to be the dominant mechanism driving the local polarization within the QPC. We compute the conductance using the cascading scattering matrix approach and observe the conductance anomaly at ∼0.7 (2e2/h).

Original languageEnglish (US)
Pages (from-to)460-462
Number of pages3
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
StatePublished - Mar 1 2005

Keywords

  • 0.7 Anomaly
  • 2DEG
  • Exchange potential
  • Quantum point contact

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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