Spontaneous oscillations in gallium arsenide field effect transistors

H. L. Grubin, D. K. Ferry, K. R. Gleason

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

We present results of experiments and numerical simulations designed to reveal the presence of spontaneous oscillations arising from negative differential mobility effects in gallium arsenide field effect transistors. The measurements include d.c. and pulsed current/voltage vs temperature characterization, sampling scope measurements, spectral analysis to 40 GHz and observation of light emission. The simulation is a time dependent large signal transient analysis arising from a fully two-dimensional solution of the self-consistent potential and charge within the device.

Original languageEnglish (US)
Pages (from-to)157-172
Number of pages16
JournalSolid State Electronics
Volume23
Issue number2
DOIs
StatePublished - Feb 1980

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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