Abstract

We develop a procedure to calculate spin relaxation times of electrons and holes in semiconductors using full band structures. The spin-orbit (SO) interaction is included in the unperturbed Hamiltonian. With the use of spin projection operators, we calculate electron and hole spin relaxation from both Elliott-Yafet and D'yakonov-Perel' mechanisms, and quantitatively explain measurements of GaAs. The predicted relaxation times of GaN are longer for electrons, but shorter for holes. We find that the valence band SO splitting at the zone center is not a good indicator of SO coupling for electrons.

Original languageEnglish (US)
Article number245312
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number24
DOIs
StatePublished - Jun 15 2005

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Zinc
zinc
Semiconductor materials
Orbits
Electrons
Relaxation time
electrons
Hamiltonians
relaxation time
orbits
Valence bands
Band structure
Mathematical operators
spin-orbit interactions
electron spin
projection
valence
operators

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Spin relaxation of electrons and holes in zinc-blende semiconductors. / Yu, Z. G.; Krishnamurthy, S.; Van Schilfgaarde, Mark; Newman, Nathan.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 24, 245312, 15.06.2005.

Research output: Contribution to journalArticle

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AB - We develop a procedure to calculate spin relaxation times of electrons and holes in semiconductors using full band structures. The spin-orbit (SO) interaction is included in the unperturbed Hamiltonian. With the use of spin projection operators, we calculate electron and hole spin relaxation from both Elliott-Yafet and D'yakonov-Perel' mechanisms, and quantitatively explain measurements of GaAs. The predicted relaxation times of GaN are longer for electrons, but shorter for holes. We find that the valence band SO splitting at the zone center is not a good indicator of SO coupling for electrons.

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