We develop a procedure to calculate spin relaxation times of electrons and holes in semiconductors using full band structures. The spin-orbit (SO) interaction is included in the unperturbed Hamiltonian. With the use of spin projection operators, we calculate electron and hole spin relaxation from both Elliott-Yafet and D'yakonov-Perel' mechanisms, and quantitatively explain measurements of GaAs. The predicted relaxation times of GaN are longer for electrons, but shorter for holes. We find that the valence band SO splitting at the zone center is not a good indicator of SO coupling for electrons.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jun 15 2005|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics