Spin polarization in GaAs/Al0.24Ga<0.76As heterostructures

Ashwin Ashok; Richard Akis; Dragica Vasileska; David K. Ferry

Spin polarization in GaAs/Al_0.24Ga<_0.76As heterostructures

Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs split gate heterostrucrure is investigated. Self consistent calculations of the electronic structure of the QPC are performed using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange interaction is found to be the dominant mechanism driving the local spin polarization within the QPC. The cascading scattering matrix approach is utilized to compute the conductance and a conductance anomaly at ∼ 0.5 (2e²/h) has been observed. In addition to this, the sheet density dependence of the 0.7 conduction anomaly is investigated.

Original language	English (US)
Title of host publication	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
Editors	M. Laudon, B. Romanowicz
Pages	17-20
Number of pages	4
State	Published - 2005
Event	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States Duration: May 8 2005 → May 12 2005

Publication series

Name	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Other

Other	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
Country/Territory	United States
City	Anaheim, CA
Period	5/8/05 → 5/12/05

Keywords

0.7 structure
2DEG
LDA
QPC

ASJC Scopus subject areas

General Engineering

Cite this

Spin polarization in GaAs/Al_0.24Ga<_0.76As heterostructures. / Ashok, Ashwin; Akis, Richard; Vasileska, Dragica et al.
2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. ed. / M. Laudon; B. Romanowicz. 2005. p. 17-20 (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ashok, A, Akis, R, Vasileska, D & Ferry, DK 2005, Spin polarization in GaAs/Al_0.24Ga<_0.76As heterostructures. in M Laudon & B Romanowicz (eds), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings, pp. 17-20, 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005, Anaheim, CA, United States, 5/8/05.

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abstract = "The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs split gate heterostrucrure is investigated. Self consistent calculations of the electronic structure of the QPC are performed using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange interaction is found to be the dominant mechanism driving the local spin polarization within the QPC. The cascading scattering matrix approach is utilized to compute the conductance and a conductance anomaly at ∼ 0.5 (2e2/h) has been observed. In addition to this, the sheet density dependence of the 0.7 conduction anomaly is investigated.",

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AU - Ashok, Ashwin

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N2 - The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs split gate heterostrucrure is investigated. Self consistent calculations of the electronic structure of the QPC are performed using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange interaction is found to be the dominant mechanism driving the local spin polarization within the QPC. The cascading scattering matrix approach is utilized to compute the conductance and a conductance anomaly at ∼ 0.5 (2e2/h) has been observed. In addition to this, the sheet density dependence of the 0.7 conduction anomaly is investigated.

AB - The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs split gate heterostrucrure is investigated. Self consistent calculations of the electronic structure of the QPC are performed using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange interaction is found to be the dominant mechanism driving the local spin polarization within the QPC. The cascading scattering matrix approach is utilized to compute the conductance and a conductance anomaly at ∼ 0.5 (2e2/h) has been observed. In addition to this, the sheet density dependence of the 0.7 conduction anomaly is investigated.

KW - 0.7 structure

KW - 2DEG

KW - LDA

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