Spin lifetimes of electrons injected into GaAs and GaN

Srinivasan Krishnamurthy; Mark Van Schilfgaarde; Nathan Newman

doi:10.1063/1.1606873

Spin lifetimes of electrons injected into GaAs and GaN

Srinivasan Krishnamurthy, Mark Van Schilfgaarde, Nathan Newman

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115 Scopus citations

Abstract

The spin relaxation of electrons was studied using accurate GaAs and zinc-blende GaN conduction bands generated with a long-range tight-binding Hamiltonian obtained from empirical psuedopotentials. The calculated spin lifetimes of low kinetic-energy electrons in GaAs were in reasonable agreement with measured values. When nonradiative recombination was not dominant, the mean-free path for the electrons with an injected energy of 0.5 eV was predicted to be about 1 mm in high-purity GaN.

Original language	English (US)
Pages (from-to)	1761-1763
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	9
DOIs	https://doi.org/10.1063/1.1606873
State	Published - Sep 1 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Spin lifetimes of electrons injected into GaAs and GaN",

abstract = "The spin relaxation of electrons was studied using accurate GaAs and zinc-blende GaN conduction bands generated with a long-range tight-binding Hamiltonian obtained from empirical psuedopotentials. The calculated spin lifetimes of low kinetic-energy electrons in GaAs were in reasonable agreement with measured values. When nonradiative recombination was not dominant, the mean-free path for the electrons with an injected energy of 0.5 eV was predicted to be about 1 mm in high-purity GaN.",

author = "Srinivasan Krishnamurthy and {Van Schilfgaarde}, Mark and Nathan Newman",

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AU - Krishnamurthy, Srinivasan

AU - Van Schilfgaarde, Mark

AU - Newman, Nathan

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N2 - The spin relaxation of electrons was studied using accurate GaAs and zinc-blende GaN conduction bands generated with a long-range tight-binding Hamiltonian obtained from empirical psuedopotentials. The calculated spin lifetimes of low kinetic-energy electrons in GaAs were in reasonable agreement with measured values. When nonradiative recombination was not dominant, the mean-free path for the electrons with an injected energy of 0.5 eV was predicted to be about 1 mm in high-purity GaN.

AB - The spin relaxation of electrons was studied using accurate GaAs and zinc-blende GaN conduction bands generated with a long-range tight-binding Hamiltonian obtained from empirical psuedopotentials. The calculated spin lifetimes of low kinetic-energy electrons in GaAs were in reasonable agreement with measured values. When nonradiative recombination was not dominant, the mean-free path for the electrons with an injected energy of 0.5 eV was predicted to be about 1 mm in high-purity GaN.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Spin lifetimes of electrons injected into GaAs and GaN

Abstract

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