Spin lifetimes of electrons injected into GaAs and GaN

Srinivasan Krishnamurthy, Mark Van Schilfgaarde, Nathan Newman

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Abstract

The spin relaxation of electrons was studied using accurate GaAs and zinc-blende GaN conduction bands generated with a long-range tight-binding Hamiltonian obtained from empirical psuedopotentials. The calculated spin lifetimes of low kinetic-energy electrons in GaAs were in reasonable agreement with measured values. When nonradiative recombination was not dominant, the mean-free path for the electrons with an injected energy of 0.5 eV was predicted to be about 1 mm in high-purity GaN.

Original languageEnglish (US)
Pages (from-to)1761-1763
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number9
DOIs
StatePublished - Sep 1 2003

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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