The spin relaxation of electrons was studied using accurate GaAs and zinc-blende GaN conduction bands generated with a long-range tight-binding Hamiltonian obtained from empirical psuedopotentials. The calculated spin lifetimes of low kinetic-energy electrons in GaAs were in reasonable agreement with measured values. When nonradiative recombination was not dominant, the mean-free path for the electrons with an injected energy of 0.5 eV was predicted to be about 1 mm in high-purity GaN.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)