Spin lifetimes of electrons injected into GaAs and GaN

Srinivasan Krishnamurthy, Mark Van Schilfgaarde, Nathan Newman

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

The spin relaxation of electrons was studied using accurate GaAs and zinc-blende GaN conduction bands generated with a long-range tight-binding Hamiltonian obtained from empirical psuedopotentials. The calculated spin lifetimes of low kinetic-energy electrons in GaAs were in reasonable agreement with measured values. When nonradiative recombination was not dominant, the mean-free path for the electrons with an injected energy of 0.5 eV was predicted to be about 1 mm in high-purity GaN.

Original languageEnglish (US)
Pages (from-to)1761-1763
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number9
DOIs
StatePublished - Sep 1 2003

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life (durability)
electrons
mean free path
conduction bands
purity
zinc
kinetic energy
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Spin lifetimes of electrons injected into GaAs and GaN. / Krishnamurthy, Srinivasan; Van Schilfgaarde, Mark; Newman, Nathan.

In: Applied Physics Letters, Vol. 83, No. 9, 01.09.2003, p. 1761-1763.

Research output: Contribution to journalArticle

Krishnamurthy, Srinivasan ; Van Schilfgaarde, Mark ; Newman, Nathan. / Spin lifetimes of electrons injected into GaAs and GaN. In: Applied Physics Letters. 2003 ; Vol. 83, No. 9. pp. 1761-1763.
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