TY - JOUR
T1 - Spin-dependent tunneling in discontinuous metal/insulator multilayers
AU - Dieny, B.
AU - Sankar, S.
AU - McCartney, Martha
AU - Smith, David
AU - Bayle-Guillemaud, P.
AU - Berkowitz, A. E.
N1 - Funding Information:
This work was supported by NSF grant DMR-9400439 and by the ATP-Heads program administrated by NSIC. Fig. 2 a was produced at the Center for High Resolution Electron Microscopy at Arizona State University under NSF grant DMR-9314326.
PY - 1998/6/16
Y1 - 1998/6/16
N2 - We have studied the structural, magnetic and transport properties of (Co/SiO2) discontinuous multilayers. These multilayers consist of layers of Co particles embedded in an insulating SiO2 matrix. The current-in-plane (CIP) and current-perpendicular-to-the-plane (CPP) resistivities of the discontinuous multilayers can be tuned independently over orders of magnitude by varying the nominal thicknesses of the metallic and insulating layers. Negative magnetoresistance (MR) due to spin-dependent tunneling has been observed in both CIP and CPP geometries. At room temperature the two magnetoresistive responses are similar, differing only in magnitude. At lower temperatures, the two responses are remarkably different. The CIP-MR saturates readily following the magnetization curve whereas the CPP-MR exhibits hysteresis up to magnetic fields higher than 20 kOe. These differences suggest the nature of the magnetic domain structure in each metallic plane. These systems should permit a combination of ease in preparation with high magnetoresistance sensitivity at low fields.
AB - We have studied the structural, magnetic and transport properties of (Co/SiO2) discontinuous multilayers. These multilayers consist of layers of Co particles embedded in an insulating SiO2 matrix. The current-in-plane (CIP) and current-perpendicular-to-the-plane (CPP) resistivities of the discontinuous multilayers can be tuned independently over orders of magnitude by varying the nominal thicknesses of the metallic and insulating layers. Negative magnetoresistance (MR) due to spin-dependent tunneling has been observed in both CIP and CPP geometries. At room temperature the two magnetoresistive responses are similar, differing only in magnitude. At lower temperatures, the two responses are remarkably different. The CIP-MR saturates readily following the magnetization curve whereas the CPP-MR exhibits hysteresis up to magnetic fields higher than 20 kOe. These differences suggest the nature of the magnetic domain structure in each metallic plane. These systems should permit a combination of ease in preparation with high magnetoresistance sensitivity at low fields.
KW - Coulomb blockade
KW - Discontinuous multilayers
KW - Metal/insulator multilayers
KW - Spin electronics
KW - Spin-polarized tunneling
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U2 - 10.1016/S0304-8853(98)00028-6
DO - 10.1016/S0304-8853(98)00028-6
M3 - Article
AN - SCOPUS:0032474325
SN - 0304-8853
VL - 185
SP - 283
EP - 292
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - 3
ER -