Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

B. Lee; K. Arai; B. J. Skromme; S. S. Bose; T. J. Roth; J. A. Aguilar; T. R. Lepkowski; N. C. Tien; G. E. Stillman

doi:10.1063/1.344040

Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

B. Lee, K. Arai, B. J. Skromme, S. S. Bose, T. J. Roth, J. A. Aguilar, T. R. Lepkowski, N. C. Tien, G. E. Stillman

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Abstract

The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.

Original language	English (US)
Pages (from-to)	3772-3786
Number of pages	15
Journal	Journal of Applied Physics
Volume	66
Issue number	8
DOIs	https://doi.org/10.1063/1.344040
State	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.344040

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Lee, B., Arai, K., Skromme, B. J., Bose, S. S., Roth, T. J., Aguilar, J. A., Lepkowski, T. R., Tien, N. C., & Stillman, G. E. (1989). Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide. Journal of Applied Physics, 66(8), 3772-3786. https://doi.org/10.1063/1.344040

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title = "Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide",

abstract = "The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.",

author = "B. Lee and K. Arai and Skromme, {B. J.} and Bose, {S. S.} and Roth, {T. J.} and Aguilar, {J. A.} and Lepkowski, {T. R.} and Tien, {N. C.} and Stillman, {G. E.}",

year = "1989",

doi = "10.1063/1.344040",

language = "English (US)",

volume = "66",

pages = "3772--3786",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

AU - Lee, B.

AU - Arai, K.

AU - Skromme, B. J.

AU - Bose, S. S.

AU - Roth, T. J.

AU - Aguilar, J. A.

AU - Lepkowski, T. R.

AU - Tien, N. C.

AU - Stillman, G. E.

PY - 1989

Y1 - 1989

N2 - The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.

AB - The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.

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JF - Journal of Applied Physics

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ER -

Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

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