Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

B. Lee, K. Arai, Brian Skromme, S. S. Bose, T. J. Roth, J. A. Aguilar, T. R. Lepkowski, N. C. Tien, G. E. Stillman

Research output: Contribution to journalArticle

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Abstract

The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.

Original languageEnglish (US)
Pages (from-to)3772-3786
Number of pages15
JournalJournal of Applied Physics
Volume66
Issue number8
DOIs
StatePublished - 1989
Externally publishedYes

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gallium
partial pressure
vapor phases
impurities
silicon
oxygen
photoluminescence
hydrides
purity
chlorides
excitons
retarding
injection
ionization
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide. / Lee, B.; Arai, K.; Skromme, Brian; Bose, S. S.; Roth, T. J.; Aguilar, J. A.; Lepkowski, T. R.; Tien, N. C.; Stillman, G. E.

In: Journal of Applied Physics, Vol. 66, No. 8, 1989, p. 3772-3786.

Research output: Contribution to journalArticle

Lee, B. ; Arai, K. ; Skromme, Brian ; Bose, S. S. ; Roth, T. J. ; Aguilar, J. A. ; Lepkowski, T. R. ; Tien, N. C. ; Stillman, G. E. / Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 8. pp. 3772-3786.
@article{307daa0a7499409999941dc1d15ceece,
title = "Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide",
abstract = "The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.",
author = "B. Lee and K. Arai and Brian Skromme and Bose, {S. S.} and Roth, {T. J.} and Aguilar, {J. A.} and Lepkowski, {T. R.} and Tien, {N. C.} and Stillman, {G. E.}",
year = "1989",
doi = "10.1063/1.344040",
language = "English (US)",
volume = "66",
pages = "3772--3786",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

AU - Lee, B.

AU - Arai, K.

AU - Skromme, Brian

AU - Bose, S. S.

AU - Roth, T. J.

AU - Aguilar, J. A.

AU - Lepkowski, T. R.

AU - Tien, N. C.

AU - Stillman, G. E.

PY - 1989

Y1 - 1989

N2 - The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.

AB - The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.

UR - http://www.scopus.com/inward/record.url?scp=36549097491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549097491&partnerID=8YFLogxK

U2 - 10.1063/1.344040

DO - 10.1063/1.344040

M3 - Article

VL - 66

SP - 3772

EP - 3786

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -