Spectroscopic characterization of ion-implanted GaN

L. Chen, Brian Skromme

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300°C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages755-760
Number of pages6
Volume743
StatePublished - 2002
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

Other

OtherGan and Related Alloys - 2002
CountryUnited States
CityBoston, MA
Period12/2/0212/6/02

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Chen, L., & Skromme, B. (2002). Spectroscopic characterization of ion-implanted GaN. In C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, & Y. Arakawa (Eds.), Materials Research Society Symposium - Proceedings (Vol. 743, pp. 755-760)