Spectroscopic characterization of ion-implanted GaN

L. Chen; Brian Skromme

Spectroscopic characterization of ion-implanted GaN

L. Chen, Brian Skromme

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

We investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300°C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	C. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages	755-760
Number of pages	6
Volume	743
State	Published - 2002
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002

Other

Other	Gan and Related Alloys - 2002
Country/Territory	United States
City	Boston, MA
Period	12/2/02 → 12/6/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{d4ed43248a3d484f8f6e8cac8ddb5893,

title = "Spectroscopic characterization of ion-implanted GaN",

abstract = "We investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300°C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.",

author = "L. Chen and Brian Skromme",

year = "2002",

language = "English (US)",

volume = "743",

pages = "755--760",

editor = "C. Wetzel and E.T. Yu and J.S. Speck and A. Rizzi and Y. Arakawa",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

}

TY - GEN

T1 - Spectroscopic characterization of ion-implanted GaN

AU - Chen, L.

AU - Skromme, Brian

PY - 2002

Y1 - 2002

N2 - We investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300°C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

AB - We investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300°C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

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M3 - Conference contribution

AN - SCOPUS:0038710424

VL - 743

SP - 755

EP - 760

BT - Materials Research Society Symposium - Proceedings

A2 - Wetzel, C.

A2 - Yu, E.T.

A2 - Speck, J.S.

A2 - Rizzi, A.

A2 - Arakawa, Y.

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

ER -

Spectroscopic characterization of ion-implanted GaN

Abstract

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ASJC Scopus subject areas

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