TY - GEN
T1 - Special Session
T2 - 40th IEEE VLSI Test Symposium, VTS 2022
AU - Shah, Sahil
AU - Christen, Jennifer Blain
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - CMOS-based Ion-Sensitive Field Effect Transistors (ISFETs) are used to measure a given media's pH. CMOS-based ISFETs, in contrast to traditional glass electrode-based pH meters, are compact and consume lower power. However, ISFETs suffer from a mismatch in their output current due to the variations in CMOS fabrication and post-fabrication insulation steps. This mismatch can significantly impact the accuracy of the pH measurements. This work presents a Floating-Gate (FG) to reduce the mismatch in the ISFETs. By employing FG-based ISFET, the study effectively tunes its threshold voltage to calibrate against the mismatch. Fowler-Nordheim tunneling removes the charge from the floating node, which effectively increases the threshold voltage. In contrast, hot-electron injection is used to program the charge onto the FG node, decreasing the threshold voltage. The work experimentally demonstrates the programming of FG-based ISFETs by fabricating them in 0.5μm CMOS process. Moreover, the work characterizes different biasing schemes to program the FG-based ISFETs efficiently.
AB - CMOS-based Ion-Sensitive Field Effect Transistors (ISFETs) are used to measure a given media's pH. CMOS-based ISFETs, in contrast to traditional glass electrode-based pH meters, are compact and consume lower power. However, ISFETs suffer from a mismatch in their output current due to the variations in CMOS fabrication and post-fabrication insulation steps. This mismatch can significantly impact the accuracy of the pH measurements. This work presents a Floating-Gate (FG) to reduce the mismatch in the ISFETs. By employing FG-based ISFET, the study effectively tunes its threshold voltage to calibrate against the mismatch. Fowler-Nordheim tunneling removes the charge from the floating node, which effectively increases the threshold voltage. In contrast, hot-electron injection is used to program the charge onto the FG node, decreasing the threshold voltage. The work experimentally demonstrates the programming of FG-based ISFETs by fabricating them in 0.5μm CMOS process. Moreover, the work characterizes different biasing schemes to program the FG-based ISFETs efficiently.
UR - http://www.scopus.com/inward/record.url?scp=85132565825&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85132565825&partnerID=8YFLogxK
U2 - 10.1109/VTS52500.2021.9794140
DO - 10.1109/VTS52500.2021.9794140
M3 - Conference contribution
AN - SCOPUS:85132565825
T3 - Proceedings of the IEEE VLSI Test Symposium
BT - Proceedings - 2022 IEEE 40th VLSI Test Symposium, VTS 2022
PB - IEEE Computer Society
Y2 - 25 April 2022 through 27 April 2022
ER -