Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth

A. Bell; R. Liu; U. K. Parasuraman; Fernando Ponce; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1063/1.1807950

Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth

A. Bell, R. Liu, U. K. Parasuraman, Fernando Ponce, S. Kamiyama, H. Amano, I. Akasaki

Physics

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19 Scopus citations

Abstract

Interesting phenomena have been observed in the epitaxial lateral overgrowth of Al _xGa _1-xN alloys using facet control on serrated GaN templates. A complex microstructure is observed that involves misfit dislocation arrays that are closely related to regions with significantly large variations in composition. The dislocations are on inclined planar boundaries and result from basal-plane slip, which is allowed in this inclined facet geometry. The spatial variation of the aluminum composition in the overgrowth region is determined by cathodoluminescence spectroscopy and ranges from x = 0.06 to 0.27, for constant growth conditions that after planarization result in a uniform composition at x = 0.16. These results indicate that aluminum incorporation depends significantly on the growth direction with marked preference for facets parallel to the basal plane.

Original language	English (US)
Pages (from-to)	3417-3419
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	16
DOIs	https://doi.org/10.1063/1.1807950
State	Published - Oct 18 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Interesting phenomena have been observed in the epitaxial lateral overgrowth of Al xGa 1-xN alloys using facet control on serrated GaN templates. A complex microstructure is observed that involves misfit dislocation arrays that are closely related to regions with significantly large variations in composition. The dislocations are on inclined planar boundaries and result from basal-plane slip, which is allowed in this inclined facet geometry. The spatial variation of the aluminum composition in the overgrowth region is determined by cathodoluminescence spectroscopy and ranges from x = 0.06 to 0.27, for constant growth conditions that after planarization result in a uniform composition at x = 0.16. These results indicate that aluminum incorporation depends significantly on the growth direction with marked preference for facets parallel to the basal plane.",

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T1 - Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth

AU - Bell, A.

AU - Liu, R.

AU - Parasuraman, U. K.

AU - Ponce, Fernando

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

PY - 2004/10/18

Y1 - 2004/10/18

N2 - Interesting phenomena have been observed in the epitaxial lateral overgrowth of Al xGa 1-xN alloys using facet control on serrated GaN templates. A complex microstructure is observed that involves misfit dislocation arrays that are closely related to regions with significantly large variations in composition. The dislocations are on inclined planar boundaries and result from basal-plane slip, which is allowed in this inclined facet geometry. The spatial variation of the aluminum composition in the overgrowth region is determined by cathodoluminescence spectroscopy and ranges from x = 0.06 to 0.27, for constant growth conditions that after planarization result in a uniform composition at x = 0.16. These results indicate that aluminum incorporation depends significantly on the growth direction with marked preference for facets parallel to the basal plane.

AB - Interesting phenomena have been observed in the epitaxial lateral overgrowth of Al xGa 1-xN alloys using facet control on serrated GaN templates. A complex microstructure is observed that involves misfit dislocation arrays that are closely related to regions with significantly large variations in composition. The dislocations are on inclined planar boundaries and result from basal-plane slip, which is allowed in this inclined facet geometry. The spatial variation of the aluminum composition in the overgrowth region is determined by cathodoluminescence spectroscopy and ranges from x = 0.06 to 0.27, for constant growth conditions that after planarization result in a uniform composition at x = 0.16. These results indicate that aluminum incorporation depends significantly on the growth direction with marked preference for facets parallel to the basal plane.

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Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth

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