Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth

A. Bell, R. Liu, U. K. Parasuraman, Fernando Ponce, S. Kamiyama, H. Amano, I. Akasaki

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Interesting phenomena have been observed in the epitaxial lateral overgrowth of Al xGa 1-xN alloys using facet control on serrated GaN templates. A complex microstructure is observed that involves misfit dislocation arrays that are closely related to regions with significantly large variations in composition. The dislocations are on inclined planar boundaries and result from basal-plane slip, which is allowed in this inclined facet geometry. The spatial variation of the aluminum composition in the overgrowth region is determined by cathodoluminescence spectroscopy and ranges from x = 0.06 to 0.27, for constant growth conditions that after planarization result in a uniform composition at x = 0.16. These results indicate that aluminum incorporation depends significantly on the growth direction with marked preference for facets parallel to the basal plane.

Original languageEnglish (US)
Pages (from-to)3417-3419
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number16
DOIs
StatePublished - Oct 18 2004

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flat surfaces
luminescence
aluminum
cathodoluminescence
slip
templates
microstructure
geometry
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth. / Bell, A.; Liu, R.; Parasuraman, U. K.; Ponce, Fernando; Kamiyama, S.; Amano, H.; Akasaki, I.

In: Applied Physics Letters, Vol. 85, No. 16, 18.10.2004, p. 3417-3419.

Research output: Contribution to journalArticle

Bell, A, Liu, R, Parasuraman, UK, Ponce, F, Kamiyama, S, Amano, H & Akasaki, I 2004, 'Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth', Applied Physics Letters, vol. 85, no. 16, pp. 3417-3419. https://doi.org/10.1063/1.1807950
Bell, A. ; Liu, R. ; Parasuraman, U. K. ; Ponce, Fernando ; Kamiyama, S. ; Amano, H. ; Akasaki, I. / Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth. In: Applied Physics Letters. 2004 ; Vol. 85, No. 16. pp. 3417-3419.
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