Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth

A. Bell, R. Liu, U. K. Parasuraman, Fernando Ponce, S. Kamiyama, H. Amano, I. Akasaki

Research output: Contribution to journalArticle

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Interesting phenomena have been observed in the epitaxial lateral overgrowth of Al xGa 1-xN alloys using facet control on serrated GaN templates. A complex microstructure is observed that involves misfit dislocation arrays that are closely related to regions with significantly large variations in composition. The dislocations are on inclined planar boundaries and result from basal-plane slip, which is allowed in this inclined facet geometry. The spatial variation of the aluminum composition in the overgrowth region is determined by cathodoluminescence spectroscopy and ranges from x = 0.06 to 0.27, for constant growth conditions that after planarization result in a uniform composition at x = 0.16. These results indicate that aluminum incorporation depends significantly on the growth direction with marked preference for facets parallel to the basal plane.

Original languageEnglish (US)
Pages (from-to)3417-3419
Number of pages3
JournalApplied Physics Letters
Issue number16
Publication statusPublished - Oct 18 2004


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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