Spatial variation of ferroelectric properties in Pb(Zr0.3, Ti0.7)O3 thin films studied by atomic force microscopy

James A. Christman, Seung Hyun Kim, Hiroshi Maiwa, Jon Paul Maria, Brian J. Rodriguez, Angus I. Kingon, Robert J. Nemanich

Research output: Contribution to journalArticle

47 Scopus citations

Abstract

Imaging of the phase and magnitude of the piezoelectric strain in Pb(Zr0.3, Ti0.7)03 (PZT) capacitors is performed with an atomic force microscope. The imaging reveals a significant spatial dependence of the ferroelectric properties of both fatigued and unfatigued PZT films. We propose that the variation is related to the domain structure of the PZT. Through the measurement of local piezoelectric hysteresis loops and imaging of the piezoelectric strain, areas are observed in fatigued PZT that exhibit hysteresis loops shifted along the polarization axis. In some regions of fatigued samples, the hysteresis loops are shifted such that both remanent points of the hysteresis curve have the same polarization direction. These results have important implications for the scalability of nonvolatile ferroelectric random access memory to higher device densities.

Original languageEnglish (US)
Pages (from-to)8031-8034
Number of pages4
JournalJournal of Applied Physics
Volume87
Issue number11
DOIs
StatePublished - Jun 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Spatial variation of ferroelectric properties in Pb(Zr<sub>0.3</sub>, Ti<sub>0.7</sub>)O<sub>3</sub> thin films studied by atomic force microscopy'. Together they form a unique fingerprint.

  • Cite this