Spatial imaging of charge transport in silicon at low temperature

R. A. Moffatt, N. A. Kurinsky, C. Stanford, J. Allen, P. L. Brink, B. Cabrera, M. Cherry, F. Insulla, Fernando Ponce, K. Sundqvist, S. Yellin, J. J. Yen, B. A. Young

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm crystal of high purity silicon (∼20 kΩ cm) at temperatures between 500 mK and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the ?111? crystal axis, and we present a phenomenological model of intervalley scattering which explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon.

Original languageEnglish (US)
Article number032104
JournalApplied Physics Letters
Volume114
Issue number3
DOIs
StatePublished - Jan 21 2019
Externally publishedYes

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silicon
scattering
electric field strength
cryogenic temperature
low voltage
crystals
purity
temperature distribution
valence
orbits
anisotropy
electric fields
energy
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Moffatt, R. A., Kurinsky, N. A., Stanford, C., Allen, J., Brink, P. L., Cabrera, B., ... Young, B. A. (2019). Spatial imaging of charge transport in silicon at low temperature. Applied Physics Letters, 114(3), [032104]. https://doi.org/10.1063/1.5049691

Spatial imaging of charge transport in silicon at low temperature. / Moffatt, R. A.; Kurinsky, N. A.; Stanford, C.; Allen, J.; Brink, P. L.; Cabrera, B.; Cherry, M.; Insulla, F.; Ponce, Fernando; Sundqvist, K.; Yellin, S.; Yen, J. J.; Young, B. A.

In: Applied Physics Letters, Vol. 114, No. 3, 032104, 21.01.2019.

Research output: Contribution to journalArticle

Moffatt, RA, Kurinsky, NA, Stanford, C, Allen, J, Brink, PL, Cabrera, B, Cherry, M, Insulla, F, Ponce, F, Sundqvist, K, Yellin, S, Yen, JJ & Young, BA 2019, 'Spatial imaging of charge transport in silicon at low temperature', Applied Physics Letters, vol. 114, no. 3, 032104. https://doi.org/10.1063/1.5049691
Moffatt RA, Kurinsky NA, Stanford C, Allen J, Brink PL, Cabrera B et al. Spatial imaging of charge transport in silicon at low temperature. Applied Physics Letters. 2019 Jan 21;114(3). 032104. https://doi.org/10.1063/1.5049691
Moffatt, R. A. ; Kurinsky, N. A. ; Stanford, C. ; Allen, J. ; Brink, P. L. ; Cabrera, B. ; Cherry, M. ; Insulla, F. ; Ponce, Fernando ; Sundqvist, K. ; Yellin, S. ; Yen, J. J. ; Young, B. A. / Spatial imaging of charge transport in silicon at low temperature. In: Applied Physics Letters. 2019 ; Vol. 114, No. 3.
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