Spatial distribution of the luminescence in GaN thin films

F. A. Ponce, D. P. Bour, W. Götz, P. J. Wright

Research output: Contribution to journalArticle

328 Scopus citations

Abstract

The spatial dependence of the luminescence intensities at the band edge (364 nm) and at the ''yellow'' defect-band (centered at 560 nm) regions for epitaxial GaN films have been studied using cathodoluminescence microscopy at room temperature. The films were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates and were not intentionally doped. Significant nonuniformities in the band-to-band and in the yellow band emissions were observed. Yellow luminescence in small crystallites appears to originate from extended defects inside the grains and at low-angle grain boundaries. The size of band-to-band emission sites correlates with low-angle grain sizes observed by transmission electron microscopy.

Original languageEnglish (US)
Pages (from-to)57-59
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number1
DOIs
StatePublished - Dec 1 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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