Abstract

A full scale simulation model, that resolves the spatio- temporal behavior of competing longitudinal mode and transverse filamentation instabilities in a wide variety of high brightness edge emitter geometries, is presented. The model is highly modular and is built on a first principles microscopic physics basis. The nonlinear optical response function of the semiconductor, computed for specific QW structures, covers the low-density absorption to high density gain saturation regimes. As an illustration of its robustness as a laser design tool, the model is applied to a monolithically integrated flared amplifier master oscillator power amplifier semiconductor laser.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages562-571
Number of pages10
ISBN (Print)0819424056
StatePublished - Dec 1 1997
EventPhysics and Simulation of Optoelectronic Devices V - San Jose, CA, USA
Duration: Feb 10 1997Feb 14 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2994
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices V
CitySan Jose, CA, USA
Period2/10/972/14/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Moloney, J. V., Indik, R. A., Ning, C-Z., & Egan, A. (1997). Space-time simulation of high-brightness semiconductor lasers. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 562-571). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2994). Society of Photo-Optical Instrumentation Engineers.