Abstract

A full scale simulation model, that resolves the spatio- temporal behavior of competing longitudinal mode and transverse filamentation instabilities in a wide variety of high brightness edge emitter geometries, is presented. The model is highly modular and is built on a first principles microscopic physics basis. The nonlinear optical response function of the semiconductor, computed for specific QW structures, covers the low-density absorption to high density gain saturation regimes. As an illustration of its robustness as a laser design tool, the model is applied to a monolithically integrated flared amplifier master oscillator power amplifier semiconductor laser.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Place of PublicationBellingham, WA, United States
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages562-571
Number of pages10
Volume2994
ISBN (Print)0819424056
StatePublished - 1997
EventPhysics and Simulation of Optoelectronic Devices V - San Jose, CA, USA
Duration: Feb 10 1997Feb 14 1997

Other

OtherPhysics and Simulation of Optoelectronic Devices V
CitySan Jose, CA, USA
Period2/10/972/14/97

Fingerprint

Semiconductor lasers
Luminance
brightness
semiconductor lasers
simulation
power amplifiers
Power amplifiers
emitters
Physics
amplifiers
oscillators
Semiconductor materials
saturation
physics
Geometry
Lasers
geometry
lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Moloney, J. V., Indik, R. A., Ning, C-Z., & Egan, A. (1997). Space-time simulation of high-brightness semiconductor lasers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2994, pp. 562-571). Bellingham, WA, United States: Society of Photo-Optical Instrumentation Engineers.

Space-time simulation of high-brightness semiconductor lasers. / Moloney, Jerome V.; Indik, Robert A.; Ning, Cun-Zheng; Egan, Aidan.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994 Bellingham, WA, United States : Society of Photo-Optical Instrumentation Engineers, 1997. p. 562-571.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Moloney, JV, Indik, RA, Ning, C-Z & Egan, A 1997, Space-time simulation of high-brightness semiconductor lasers. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2994, Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States, pp. 562-571, Physics and Simulation of Optoelectronic Devices V, San Jose, CA, USA, 2/10/97.
Moloney JV, Indik RA, Ning C-Z, Egan A. Space-time simulation of high-brightness semiconductor lasers. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994. Bellingham, WA, United States: Society of Photo-Optical Instrumentation Engineers. 1997. p. 562-571
Moloney, Jerome V. ; Indik, Robert A. ; Ning, Cun-Zheng ; Egan, Aidan. / Space-time simulation of high-brightness semiconductor lasers. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994 Bellingham, WA, United States : Society of Photo-Optical Instrumentation Engineers, 1997. pp. 562-571
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