TY - GEN
T1 - Space-time simulation of high-brightness semiconductor lasers
AU - Moloney, Jerome V.
AU - Indik, Robert A.
AU - Ning, Cun-Zheng
AU - Egan, Aidan
PY - 1997/12/1
Y1 - 1997/12/1
N2 - A full scale simulation model, that resolves the spatio- temporal behavior of competing longitudinal mode and transverse filamentation instabilities in a wide variety of high brightness edge emitter geometries, is presented. The model is highly modular and is built on a first principles microscopic physics basis. The nonlinear optical response function of the semiconductor, computed for specific QW structures, covers the low-density absorption to high density gain saturation regimes. As an illustration of its robustness as a laser design tool, the model is applied to a monolithically integrated flared amplifier master oscillator power amplifier semiconductor laser.
AB - A full scale simulation model, that resolves the spatio- temporal behavior of competing longitudinal mode and transverse filamentation instabilities in a wide variety of high brightness edge emitter geometries, is presented. The model is highly modular and is built on a first principles microscopic physics basis. The nonlinear optical response function of the semiconductor, computed for specific QW structures, covers the low-density absorption to high density gain saturation regimes. As an illustration of its robustness as a laser design tool, the model is applied to a monolithically integrated flared amplifier master oscillator power amplifier semiconductor laser.
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M3 - Conference contribution
AN - SCOPUS:0031384955
SN - 0819424056
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 562
EP - 571
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Society of Photo-Optical Instrumentation Engineers
T2 - Physics and Simulation of Optoelectronic Devices V
Y2 - 10 February 1997 through 14 February 1997
ER -