Solution-based n-type doping in Cu2O and its implications for 3rd-generation cells

X. Han, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Cu2O is naturally p-type, which has prevented an efficient Cu2O solar cell. N-type doping of Cu2O is demonstrated during electrodeposition of Cu2O by adding a Cl precursor to the aqueous solution. Current-voltage characterization reveals that the resistivity of undoped Cu2O by electrodeposition is ∼40 MΩ-cm, while that of Cl-doped Cu2O is significantly reduced to as low as ∼7 Ω-cm. X-ray diffraction confirms that the films are pure Cu2O. Photocurrent measurements verify that Cl-doped Cu2O is n-type. The solution-based doping method is particularly suitable for low-cost, large-area and high-throughput fabrication of solar cells. In addition, since the doping method substitutes chalcogen with halogen by co-precipitation of halide with chalcogenide, it is in principle universal for n-type doping in other solution-prepared chalcogenides. Several 3rd-generation concepts are enabled by the doping method through solution-prepared chalcogenide nanowires, including radial p-n junctions for enhanced charge separation in organic/inorganic hybrid cells and 3-dimensional p-n junctions for decoupling of photon absorption and charge separation in solar cells.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages2086-2089
Number of pages4
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

Fingerprint

Doping (additives)
Solar cells
Electrodeposition
Chalcogenides
Coprecipitation
Photocurrents
Nanowires
Photons
Throughput
Fabrication
X ray diffraction
Electric potential
Costs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Han, X., & Tao, M. (2009). Solution-based n-type doping in Cu2O and its implications for 3rd-generation cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2086-2089). [5411437] https://doi.org/10.1109/PVSC.2009.5411437

Solution-based n-type doping in Cu2O and its implications for 3rd-generation cells. / Han, X.; Tao, Meng.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2009. p. 2086-2089 5411437.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Han, X & Tao, M 2009, Solution-based n-type doping in Cu2O and its implications for 3rd-generation cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5411437, pp. 2086-2089, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411437
Han X, Tao M. Solution-based n-type doping in Cu2O and its implications for 3rd-generation cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2009. p. 2086-2089. 5411437 https://doi.org/10.1109/PVSC.2009.5411437
Han, X. ; Tao, Meng. / Solution-based n-type doping in Cu2O and its implications for 3rd-generation cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 2009. pp. 2086-2089
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