Solution-based n-type doping in Cu2O and its implications for 3rd-generation cells

X. Han, M. Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Cu2O is naturally p-type, which has prevented an efficient Cu2O solar cell. N-type doping of Cu2O is demonstrated during electrodeposition of Cu2O by adding a Cl precursor to the aqueous solution. Current-voltage characterization reveals that the resistivity of undoped Cu2O by electrodeposition is ∼40 MΩ-cm, while that of Cl-doped Cu2O is significantly reduced to as low as ∼7 Ω-cm. X-ray diffraction confirms that the films are pure Cu2O. Photocurrent measurements verify that Cl-doped Cu2O is n-type. The solution-based doping method is particularly suitable for low-cost, large-area and high-throughput fabrication of solar cells. In addition, since the doping method substitutes chalcogen with halogen by co-precipitation of halide with chalcogenide, it is in principle universal for n-type doping in other solution-prepared chalcogenides. Several 3rd-generation concepts are enabled by the doping method through solution-prepared chalcogenide nanowires, including radial p-n junctions for enhanced charge separation in organic/inorganic hybrid cells and 3-dimensional p-n junctions for decoupling of photon absorption and charge separation in solar cells.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Number of pages4
StatePublished - Dec 1 2009
Externally publishedYes
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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