TY - GEN
T1 - Solution-based n-type doping in Cu2O and its implications for 3rd-generation cells
AU - Han, X.
AU - Tao, M.
PY - 2009
Y1 - 2009
N2 - Cu2O is naturally p-type, which has prevented an efficient Cu2O solar cell. N-type doping of Cu2O is demonstrated during electrodeposition of Cu2O by adding a Cl precursor to the aqueous solution. Current-voltage characterization reveals that the resistivity of undoped Cu2O by electrodeposition is ∼40 MΩ-cm, while that of Cl-doped Cu2O is significantly reduced to as low as ∼7 Ω-cm. X-ray diffraction confirms that the films are pure Cu2O. Photocurrent measurements verify that Cl-doped Cu2O is n-type. The solution-based doping method is particularly suitable for low-cost, large-area and high-throughput fabrication of solar cells. In addition, since the doping method substitutes chalcogen with halogen by co-precipitation of halide with chalcogenide, it is in principle universal for n-type doping in other solution-prepared chalcogenides. Several 3rd-generation concepts are enabled by the doping method through solution-prepared chalcogenide nanowires, including radial p-n junctions for enhanced charge separation in organic/inorganic hybrid cells and 3-dimensional p-n junctions for decoupling of photon absorption and charge separation in solar cells.
AB - Cu2O is naturally p-type, which has prevented an efficient Cu2O solar cell. N-type doping of Cu2O is demonstrated during electrodeposition of Cu2O by adding a Cl precursor to the aqueous solution. Current-voltage characterization reveals that the resistivity of undoped Cu2O by electrodeposition is ∼40 MΩ-cm, while that of Cl-doped Cu2O is significantly reduced to as low as ∼7 Ω-cm. X-ray diffraction confirms that the films are pure Cu2O. Photocurrent measurements verify that Cl-doped Cu2O is n-type. The solution-based doping method is particularly suitable for low-cost, large-area and high-throughput fabrication of solar cells. In addition, since the doping method substitutes chalcogen with halogen by co-precipitation of halide with chalcogenide, it is in principle universal for n-type doping in other solution-prepared chalcogenides. Several 3rd-generation concepts are enabled by the doping method through solution-prepared chalcogenide nanowires, including radial p-n junctions for enhanced charge separation in organic/inorganic hybrid cells and 3-dimensional p-n junctions for decoupling of photon absorption and charge separation in solar cells.
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U2 - 10.1109/PVSC.2009.5411437
DO - 10.1109/PVSC.2009.5411437
M3 - Conference contribution
AN - SCOPUS:77951560883
SN - 9781424429509
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2086
EP - 2089
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Y2 - 7 June 2009 through 12 June 2009
ER -