For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Dec 19 2007|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering