Solid-state electrochemical nanoimprinting of copper

Peter L. Schultz, Keng H. Hsu, Nicholas X. Fang, Placid M. Ferreira

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.

Original languageEnglish (US)
Pages (from-to)2419-2424
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number6
DOIs
StatePublished - 2007
Externally publishedYes

Fingerprint

etching
solid state
Copper
copper sulfides
copper
solid electrolytes
metals
Dry etching
Solid electrolytes
Metals
fabrication
Etching
liquids
Fabrication
ions
Ions
Liquids
Sulfides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Solid-state electrochemical nanoimprinting of copper. / Schultz, Peter L.; Hsu, Keng H.; Fang, Nicholas X.; Ferreira, Placid M.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 6, 2007, p. 2419-2424.

Research output: Contribution to journalArticle

Schultz, Peter L. ; Hsu, Keng H. ; Fang, Nicholas X. ; Ferreira, Placid M. / Solid-state electrochemical nanoimprinting of copper. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 ; Vol. 25, No. 6. pp. 2419-2424.
@article{906b236be02e4f73a87b98cbcf6d5bf7,
title = "Solid-state electrochemical nanoimprinting of copper",
abstract = "For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 {\AA}s without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.",
author = "Schultz, {Peter L.} and Hsu, {Keng H.} and Fang, {Nicholas X.} and Ferreira, {Placid M.}",
year = "2007",
doi = "10.1116/1.2799977",
language = "English (US)",
volume = "25",
pages = "2419--2424",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Solid-state electrochemical nanoimprinting of copper

AU - Schultz, Peter L.

AU - Hsu, Keng H.

AU - Fang, Nicholas X.

AU - Ferreira, Placid M.

PY - 2007

Y1 - 2007

N2 - For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.

AB - For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.

UR - http://www.scopus.com/inward/record.url?scp=37149006441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37149006441&partnerID=8YFLogxK

U2 - 10.1116/1.2799977

DO - 10.1116/1.2799977

M3 - Article

VL - 25

SP - 2419

EP - 2424

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -