Abstract
Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07 |
| Pages | 86-90 |
| Number of pages | 5 |
| State | Published - 2007 |
| Event | 8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07 - Albuquerque, NM, United States Duration: Nov 10 2007 → Nov 13 2007 |
Other
| Other | 8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07 |
|---|---|
| Country | United States |
| City | Albuquerque, NM |
| Period | 11/10/07 → 11/13/07 |
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Keywords
- Flexible substrate
- PMC memory
- TFT driver
- Thin-film technology
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Solid electrolyte memory for flexible electronics. / Baliga, Sunil R.; Puthen Thermadam, Sarath C.; Kamalanathan, Deepak; Allee, David; Kozicki, Michael.
Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07. 2007. p. 86-90 4389954.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Solid electrolyte memory for flexible electronics
AU - Baliga, Sunil R.
AU - Puthen Thermadam, Sarath C.
AU - Kamalanathan, Deepak
AU - Allee, David
AU - Kozicki, Michael
PY - 2007
Y1 - 2007
N2 - Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.
AB - Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.
KW - Flexible substrate
KW - PMC memory
KW - TFT driver
KW - Thin-film technology
UR - http://www.scopus.com/inward/record.url?scp=48549093620&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=48549093620&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:48549093620
SN - 1424413621
SN - 9781424413621
SP - 86
EP - 90
BT - Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07
ER -