Abstract

Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.

Original languageEnglish (US)
Title of host publicationProceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07
Pages86-90
Number of pages5
StatePublished - 2007
Event8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07 - Albuquerque, NM, United States
Duration: Nov 10 2007Nov 13 2007

Other

Other8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07
CountryUnited States
CityAlbuquerque, NM
Period11/10/0711/13/07

Fingerprint

Flexible electronics
Solid electrolytes
Metallizing
Data storage equipment
Computer programming
Dissolution
Durability
Thin films
Electrodes
Substrates

Keywords

  • Flexible substrate
  • PMC memory
  • TFT driver
  • Thin-film technology

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Baliga, S. R., Puthen Thermadam, S. C., Kamalanathan, D., Allee, D., & Kozicki, M. (2007). Solid electrolyte memory for flexible electronics. In Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07 (pp. 86-90). [4389954]

Solid electrolyte memory for flexible electronics. / Baliga, Sunil R.; Puthen Thermadam, Sarath C.; Kamalanathan, Deepak; Allee, David; Kozicki, Michael.

Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07. 2007. p. 86-90 4389954.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Baliga, SR, Puthen Thermadam, SC, Kamalanathan, D, Allee, D & Kozicki, M 2007, Solid electrolyte memory for flexible electronics. in Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07., 4389954, pp. 86-90, 8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07, Albuquerque, NM, United States, 11/10/07.
Baliga SR, Puthen Thermadam SC, Kamalanathan D, Allee D, Kozicki M. Solid electrolyte memory for flexible electronics. In Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07. 2007. p. 86-90. 4389954
Baliga, Sunil R. ; Puthen Thermadam, Sarath C. ; Kamalanathan, Deepak ; Allee, David ; Kozicki, Michael. / Solid electrolyte memory for flexible electronics. Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07. 2007. pp. 86-90
@inproceedings{7b97b767dc42447990e58b3d5847464c,
title = "Solid electrolyte memory for flexible electronics",
abstract = "Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.",
keywords = "Flexible substrate, PMC memory, TFT driver, Thin-film technology",
author = "Baliga, {Sunil R.} and {Puthen Thermadam}, {Sarath C.} and Deepak Kamalanathan and David Allee and Michael Kozicki",
year = "2007",
language = "English (US)",
isbn = "1424413621",
pages = "86--90",
booktitle = "Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07",

}

TY - GEN

T1 - Solid electrolyte memory for flexible electronics

AU - Baliga, Sunil R.

AU - Puthen Thermadam, Sarath C.

AU - Kamalanathan, Deepak

AU - Allee, David

AU - Kozicki, Michael

PY - 2007

Y1 - 2007

N2 - Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.

AB - Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.

KW - Flexible substrate

KW - PMC memory

KW - TFT driver

KW - Thin-film technology

UR - http://www.scopus.com/inward/record.url?scp=48549093620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48549093620&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:48549093620

SN - 1424413621

SN - 9781424413621

SP - 86

EP - 90

BT - Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

ER -