Solid electrolyte memory for flexible electronics

Sunil R. Baliga; Sarath C. Puthen Thermadam; Deepak Kamalanathan; David Allee; Michael Kozicki

doi:10.1109/nvmt.2007.4389954

Solid electrolyte memory for flexible electronics

Sunil R. Baliga, Sarath C. Puthen Thermadam, Deepak Kamalanathan, David Allee, Michael Kozicki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.

Original language	English (US)
Title of host publication	Proc. - Non-Volatile Mem. Technol. Symp., NVMTS
Publisher	IEEE Computer Society
Pages	86-90
Number of pages	5
ISBN (Print)	1424413621, 9781424413621
DOIs	https://doi.org/10.1109/nvmt.2007.4389954
State	Published - Jan 1 2007
Event	8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07 - Albuquerque, NM, United States Duration: Nov 10 2007 → Nov 13 2007

Publication series

Name	Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

Other

Other	8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07
Country/Territory	United States
City	Albuquerque, NM
Period	11/10/07 → 11/13/07

Keywords

Flexible substrate
PMC memory
TFT driver
Thin-film technology

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/nvmt.2007.4389954

Cite this

Solid electrolyte memory for flexible electronics. / Baliga, Sunil R.; Puthen Thermadam, Sarath C.; Kamalanathan, Deepak; Allee, David ; Kozicki, Michael.

Proc. - Non-Volatile Mem. Technol. Symp., NVMTS. IEEE Computer Society, 2007. p. 86-90 4389954 (Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Baliga, SR, Puthen Thermadam, SC, Kamalanathan, D, Allee, D & Kozicki, M 2007, Solid electrolyte memory for flexible electronics. in Proc. - Non-Volatile Mem. Technol. Symp., NVMTS., 4389954, Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07, IEEE Computer Society, pp. 86-90, 8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07, Albuquerque, NM, United States, 11/10/07. https://doi.org/10.1109/nvmt.2007.4389954

@inproceedings{7b97b767dc42447990e58b3d5847464c,

title = "Solid electrolyte memory for flexible electronics",

abstract = "Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.",

keywords = "Flexible substrate, PMC memory, TFT driver, Thin-film technology",

author = "Baliga, {Sunil R.} and {Puthen Thermadam}, {Sarath C.} and Deepak Kamalanathan and David Allee and Michael Kozicki",

year = "2007",

month = jan,

day = "1",

doi = "10.1109/nvmt.2007.4389954",

language = "English (US)",

isbn = "1424413621",

series = "Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07",

publisher = "IEEE Computer Society",

pages = "86--90",

booktitle = "Proc. - Non-Volatile Mem. Technol. Symp., NVMTS",

note = "8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07 ; Conference date: 10-11-2007 Through 13-11-2007",

}

TY - GEN

T1 - Solid electrolyte memory for flexible electronics

AU - Baliga, Sunil R.

AU - Puthen Thermadam, Sarath C.

AU - Kamalanathan, Deepak

AU - Allee, David

AU - Kozicki, Michael

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.

AB - Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.

KW - Flexible substrate

KW - PMC memory

KW - TFT driver

KW - Thin-film technology

UR - http://www.scopus.com/inward/record.url?scp=48549093620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48549093620&partnerID=8YFLogxK

U2 - 10.1109/nvmt.2007.4389954

DO - 10.1109/nvmt.2007.4389954

M3 - Conference contribution

AN - SCOPUS:48549093620

SN - 1424413621

SN - 9781424413621

T3 - Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

SP - 86

EP - 90

BT - Proc. - Non-Volatile Mem. Technol. Symp., NVMTS

PB - IEEE Computer Society

T2 - 8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07

Y2 - 10 November 2007 through 13 November 2007

ER -

Solid electrolyte memory for flexible electronics

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this